D Determine the bias current IQI, the gate-to-source voltages of the transistors, and the drain-to-source voltage of Mr. Assume circuit parameters of IREFI = 50 μA, V = 5 V, and V = -5 V. Assume transistor parameters of VTN = 0.4 V (for all transistors), Kn1=0.3 mA/V2, Kn2 = 0.2 mA/V² and Kn3 = 0.14 mA/V². V+= 5V IREFI RD=4K M₁ VDSI Vasi ↓101 M2 VDS2 VGS2- M3 - + VGS 3 V=-5V
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- An apa transistor is accidentally connected with col-lector and emitter leads interchanged. The resulting currents in the normal emitter and base leads are 0.5 mA and I mA, respectively. What are the values of as and fa?In the transistor circuit on the sideMaximum values are given below. Normalmaximum VCC voltage of the BJT under conditionscalculate. Pd max = 07/100 W Vce max = 20V Ic max = 100mA Bdc = 150For the MOSFET amplifier Shown in figure below, the transistor parameters are VTN=0.8 V. Kn = 1 mA/V², and λ = 0. The circuit parameters are Vpp = 5 V. Rs = 1 KQ. Rp=4 KQ, R₁ = 225 KQ, and R₂ = 175 ko. Calculate the quiescent value of lpq VDD Ca Rin ww ww R₁ R₂ RD www Cc2 Rs www RL Vo
- Consider the BJT circuit in Figure 6. Assume that the following values remain constant duringthe operating conditions, B = 100 and VBE = 0.65V, (a) Determine whether the transistor is operating under cut-off, linear or saturation condition if base current is increased to 1.0 mA. Assume VCE(sat) = 0.3V. (b) If a PZT3904 transistor is used and the circuit is operating at the temperature of 100 C o .Referring to the data sheet in Appendix 1 and the circuit operating with the base current and VCE(sat) as in part (a), i. Determine the power rating of the transistor at the given operating temperature.ii. Determine the maximum value to which VCC can be adjusted without exceeding a rating.Which rating would be exceeded first? I sent Part A before this, it might be resolvedIn Fig. 14, the transistor Q₁ has ß = 50, and VBE,on = 0.7 V. 5V 5V 1200 ic 2.2ΚΩ www iB in Fig. 14. NPN transistor circuit no. 2. NPN State Conditions Cutoff VBE 0, BiB > ic>0 Forward Active iB > 0, VCE > 0.2 V PNP State Conditions Cutoff VBE> -0.5 V, VBC > -0.5 V Saturation İB > 0, BiB > ic>0 Forward Active iB > 0, VCE < -0.2 V 37. Using simple model transistor analysis, determine the value of ic in mA, to 1 decimal place. (Hint: guess the state of the transistor, calculate the relevant parameters, check calculated parameters against the conditions for the guessed state to be valid.) ic = mACalculate the amount of gate-to- source voltage necessary to regulate a JFET's drain current at a valueof 2.5 mA, given the following transistor parameters: VGS(of f)= 3 volts IDSS= 17 mA O 1.74 volt O 1.85 volt O 1.59 volt O 1.98 volt 3
- = Consider a silicon pn junction diode at T 300K. The reverse saturation current is ls 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.685 V and use that to determine the DC and AC resistance of the diode. RDC = 307 Q2 = rac =7Ω RDC = 224 22 rac 8 Ω RDC = 115 Q2 = rac = 40 RDC = 36 Q rac = 101.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 5 X 1017 cm 3 and N₂ = 1 X 1017 cm-3 at T = a 300K. Determine the peak electric field for this junction for a reverse voltage of 5 V. Emax = O Emax O Emax 3.88 X 105 V/cm Emax 3.21 X 105 V/cm Emax = 1.70 X 105 V/cm 1.35 X 105 V/cm =
- The value of the collector resistor in an npn silicon transistor amplifier with Bdc= 250, VBB= 2.5 V, VCC= 9 V, VCE= *:4 V, and RB=D 100 kQ will be equal to 1 KO O 1.1 KQ O 1.2 KQ O 1.3 KQ O What happens if the input voltage is higher than reference voltage in a ?positive clipper output voltage reference voltage O output voltage = dc positive voltage output voltage = input voltage O output voltage > input voltageA silicon n+-p-n transistor has impurity concentrations of 1019, 1018, and 1017 cm 3 in the emitter, base, and collector, respectively. Calculate the collector current density, Jc in the transistor with VF = 0.2V and neutral base width equal to 5 x 103 cm. Next, find the collector current density, Jc for the 2nd design nt-p-n transistor that the neutral base width has been decreased by 20%.Q1/ Consider the depletion load transistor based at Voo - 3 V. Vtn=-2 V, Vtno 0.7 V, (W/L)p-10, such that the maximum power dissipation is 320 μW, when VI-3 V. And Kn=60μA/V, Determine the output voltage.