A silicon n+-p-n transistor has impurity concentrations of 1019, 1018, and 1017 cm 3 in the emitter, base, and collector, respectively. Calculate the collector current density, Jc in the transistor with VF = 0.2V and neutral base width equal to 5 x 103 cm. Next, find the collector current density, Jc for the 2nd design nt-p-n transistor that the neutral base width has been decreased by 20%.
A silicon n+-p-n transistor has impurity concentrations of 1019, 1018, and 1017 cm 3 in the emitter, base, and collector, respectively. Calculate the collector current density, Jc in the transistor with VF = 0.2V and neutral base width equal to 5 x 103 cm. Next, find the collector current density, Jc for the 2nd design nt-p-n transistor that the neutral base width has been decreased by 20%.
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Transcribed Image Text:A silicon n+-p-n transistor has impurity concentrations of 1019, 1018, and 1017 cm
3 in the
emitter, base, and collector, respectively. Calculate the collector current density, Jc in the
transistor with VF = 0.2V and neutral base width equal to 5 x 103 cm.
Next, find the collector current density, Jc for the 2nd design nt-p-n transistor that the neutral
base width has been decreased by 20%.
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