The value of the collector resistor in an npn silicon transistor amplifier with Bdc= 250, VBB= 2.5 V, VCC= 9 V, VCE= :4 V, and RB= 100 kQ will be equal to 1 KO 1.1 KQ 1.2 KQ O 1.3 КО What happens if the input voltage is higher than reference voltage in a ?positive clipper output voltage reference voltage output voltage = dc positive voltage output voltage = input voltage output voltage > input voltage
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- In the transistor circuit on the sideMaximum values are given below. Normalmaximum VCC voltage of the BJT under conditionscalculate. Pd max = 07/100 W Vce max = 20V Ic max = 100mA Bdc = 1504 Q: A- For the transistor circuit shown in figure bellow 20 v Determine: 1- Ig , Ic , le and Vce · 2- Sketch the load line (Q-point) of the transistor. 470 2 270 kQ B=125 تمت الاجابة وسارفع الملف لاحقاRe 14.4 V 11.4 V Rg 8 kohm 12 kohm 12 V 20 V le(mA) A !g-1.425 mA Vee(Volt) Answer the questions given below, since they are taken from the circuit next to the output chart given above a) What common transistor configuration is the given circuit diagram? b) what type is the given transistor? NPN or PNP? Specify
- For the MOSFET amplifier Shown in figure below, the transistor parameters are VTN=0.8 V. Kn = 1 mA/V², and λ = 0. The circuit parameters are Vpp = 5 V. Rs = 1 KQ. Rp=4 KQ, R₁ = 225 KQ, and R₂ = 175 ko. Calculate the quiescent value of lpq VDD Ca Rin ww ww R₁ R₂ RD www Cc2 Rs www RL Vo1) A Si p-n-p transistor has the following properties at room temperature: Tn = Tp 0.1 us NE 1019 сті Emitter concentration — 10 ст2/s -3 Dn = Dp NB 3D 1016 ст Base concentration Nc 1019 ст -3 = Collector concentration WE 3 µm Emitter width W 1.5 um Metallurgical base width, i.e. the distance between base-emitter junction and base-collector junction A = 10-5 cm² = Cross-sectional area If VCB = 0 V and VEB = 0.6 V, calculate the following: ЕВ a) Neutral base width (WB) b) Base transport factor c) Emitter injection efficiency d) a, ß and y. e) Ic, Ig and Ig.An ac voltage of peak value 20v is connected in series with a silicon diode and load resistance of 5002. if the forward resistance of diode is 10Q find: i- Peak current through diode. ii- Peak output voltage. iii- What will be these values if the diode is assumed to be ideal (Vdiode =0)?
- For faithful amplification by a transistor circuit, the value of VCE Should transistor for silicon А. Вe zero В. Ве 0.01V C. Not fall below 0.5 V D. Be abvove 1V D В АAn abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 5 X 1017 cm 3 and N₂ = 1 X 1017 cm-3 at T = a 300K. Determine the peak electric field for this junction for a reverse voltage of 5 V. Emax = O Emax O Emax 3.88 X 105 V/cm Emax 3.21 X 105 V/cm Emax = 1.70 X 105 V/cm 1.35 X 105 V/cm =Operating point represents.…... A. Values of Vce and Iç when signal is applied B. The magnitude of signal C. Zero signal values of Vce and Ic D. None of the above C D В A CLEAD MY CHOICE
- 1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).4--N MOSFETs are used in the given circuit. Q1, Q2,….. The parameters of Qn MOS transistors are Vt=1V, γ=0, λ=0,μnCox=200μA/V2 and (W/L)1= (W/L) 2=….=(W/L)n=20 a) VGS=?, ID=?, gm=? b) Find the input and output impedance. c) Find the voltage gain.SOLVE IT IN DETAIL.The voltage of a BYZ83 type Zener diode is given as V, = 20v, power P, = 300mW, and Zener resistance R, = 20. a) Find the maximum current(Imm) that can flow through.