Essential University Physics: Volume 2 (3rd Edition)
3rd Edition
ISBN: 9780321976420
Author: Richard Wolfson
Publisher: PEARSON
expand_more
expand_more
format_list_bulleted
Question
Chapter 37, Problem 70PP
To determine
The effect on the fraction of solar energy absorbed and amount of absorbed energy lost as heat when a PV cell is made from a semiconductor whose energy gap is lower than silicon.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
An n-type semiconductor material, which contains
the 1016 electrons/cm³ and the charge carrier
mobility is 1100 cm²/Vs.
(i) Determine
resistivity of the n-type semiconductor
material.
the conductivity and the
(ii) Determine the diffusion coefficient at room
temperature.
(iii) Evaluate the Einstein relation for the
majority charge carrier in n-type material.
The best multi-junction solar cells have an efficiency of about 40% for converting
light energy from the sun into electricity. Estimate the size of a photocell that
would be required to supply all the annual energy used by the US. (The average
energy density from sun striking the surface of the earth is ~ 1.0 kW/m2 and
assume that the cell is illuminated for 8 hours per day) The US consumes 100 quadrillion btu of energy.
K: Estimate the ratio of the electron densities in the conduction bands of silicon (Eg 1.14 eV)
and gallium arsenide (Eg = 1.42 eV) at 400 K.
Chapter 37 Solutions
Essential University Physics: Volume 2 (3rd Edition)
Ch. 37.1 - Prob. 37.1GICh. 37.2 - If a scientist uses microwave technology to study...Ch. 37.3 - Prob. 37.3GICh. 37 - If you push two atoms together to form a molecule,...Ch. 37 - Prob. 2FTDCh. 37 - Prob. 3FTDCh. 37 - Does it make sense to distinguish individual NaCl...Ch. 37 - Prob. 5FTDCh. 37 - Prob. 6FTDCh. 37 - Radio astronomers have discovered many complex...
Ch. 37 - Prob. 8FTDCh. 37 - Prob. 9FTDCh. 37 - Prob. 10FTDCh. 37 - Prob. 11FTDCh. 37 - Prob. 12FTDCh. 37 - Prob. 13FTDCh. 37 - Prob. 14FTDCh. 37 - Prob. 15FTDCh. 37 - Prob. 16ECh. 37 - Prob. 17ECh. 37 - Prob. 18ECh. 37 - Prob. 19ECh. 37 - Prob. 20ECh. 37 - Prob. 21ECh. 37 - Prob. 22ECh. 37 - Prob. 23ECh. 37 - Prob. 24ECh. 37 - Prob. 25ECh. 37 - Prob. 26ECh. 37 - Prob. 27ECh. 37 - Prob. 28ECh. 37 - Prob. 29PCh. 37 - Prob. 30PCh. 37 - Prob. 31PCh. 37 - Prob. 32PCh. 37 - Prob. 33PCh. 37 - Prob. 34PCh. 37 - Prob. 35PCh. 37 - Prob. 36PCh. 37 - Prob. 37PCh. 37 - Prob. 38PCh. 37 - Prob. 39PCh. 37 - Prob. 40PCh. 37 - Prob. 41PCh. 37 - Prob. 42PCh. 37 - Prob. 43PCh. 37 - Prob. 44PCh. 37 - Prob. 45PCh. 37 - Prob. 46PCh. 37 - Prob. 47PCh. 37 - Prob. 48PCh. 37 - Prob. 49PCh. 37 - Prob. 50PCh. 37 - Prob. 51PCh. 37 - Prob. 52PCh. 37 - Prob. 53PCh. 37 - Prob. 54PCh. 37 - The critical field in a niobium-titanium...Ch. 37 - The transition from the ground state to the first...Ch. 37 - Prob. 57PCh. 37 - Prob. 58PCh. 37 - Youre troubled that Example 37.1 neglects the mass...Ch. 37 - Prob. 60PCh. 37 - The Madelung constant (Section 37.3) is...Ch. 37 - Prob. 62PCh. 37 - (a) Count the number of electron states N(E) with...Ch. 37 - Prob. 64PCh. 37 - Prob. 65PCh. 37 - Prob. 66PCh. 37 - Prob. 67PCh. 37 - Prob. 68PPCh. 37 - Prob. 69PPCh. 37 - Prob. 70PPCh. 37 - Prob. 71PP
Knowledge Booster
Similar questions
- At 25°C, the electrical resistivity of an intrinsic Gallium Arsenide (GaAs) is 0.042 ohms.cm and the bandgap energy is 0.85 eV. Calculate the electrical conductivity of GaAs at 70°C. (k= 8.62 x10-5 eV/K)arrow_forwardAn LED emits light with a wavelength of 500 nm (500x10-9m). What is the band gap energy in electron Volts? Hint: recall Eq. (2) and 1 eV= 1.6 x10-19 J 1.2 eV 2.5 eV 3.3 eV 4.1 eV 5.5 eVarrow_forwardIn the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid. (a) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by Where Do=0.019 cm2/s and Qo=2.74 x 105…arrow_forward
- Two diodes are connected in parallel as shown below: p(0.c.) = 0.15 p (s.c.) = 0.25 A diode may fail in one of the two ways: by short-circuiting or by open-circuiting. What is the probability that the two-diode arrangement will work as a diode?arrow_forwardSince the Fermi energy level of zinc is EF = 9.47 eV, what is the number of electrons per unit energy per unit volume at this energy level? Since the resistivity of zinc is 5.90 x 10^-8 ohm.m, calculate the average time interval between collisions of electrons.arrow_forwardIn a Si semiconductor sample of 200 am length at 600 K the hole concentration as a' function of the sample length follows a quadratic relation of the form p (x) = 1 x1015x, at equilibrium the value of the electric field at 160 jum will be: O 1.935 V/cm O 3.250 V/cm O 5805 V/cm O 55.56 V/cm O 6.450 V/cmarrow_forward
- An n-type defect in a semiconductor acts like a hydrogenic atom, with the exception that the dielectric constant of the vacuum is replaced by the dielectric constant for Si. If the dielectric constant for Si is 11.7 times larger than for the vacuum. The ionization energy for an electron in an n-type defect is approximately: А. 3.4 ev В. 0.1 ev С. 13.6 ev D. 1.2 evarrow_forwardA high electron mobility transistor (HEMT) controls large currents by applying a small voltage to a thin sheet of electrons. The density and mobility of the electrons in the sheet are critical for the operation of the HEMT. HEMTS consisting of AlGaN/GaN/Si are being studied because they promise better performance at higher powers, temperatures, and frequencies than conventional silicon HEMTS can achieve. In one study, the Hall effect was used to measure the density of electrons in one of these new HEMTs. When a current of 12.1 ?A flows through the length of the electron sheet, which is 1.12 mm long, 0.223 mm wide, and 15.1 nm thick, a magnetic field of 1.05 T perpendicular to the sheet produces a voltage of 0.511 mV across the width of the sheet. What is the density of electrons per m3 in the sheet?arrow_forwardThe peak of the spectral intensity in the emission spectrum of the sun is between 0.4 and 0.8 um wavelength You are using two different semiconductors one with a band gap of 1.24 eV and the other with a band gap of 2.07 eV as photo-absorbers for solar cell application. With the information given, please comment briefly on the likely losses in efficiency they will suffer each.arrow_forward
- A conductive wire has a conductivity of ( 0.649 × 10^-8) at room temperature are ( 5.8 x 1028) conduction electron/m.calculate the mobility,resistivity and relaxation time of electronsarrow_forwardAn abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 5 X 1017 cm 3 and N₂ = 1 X 1017 cm-3 at T = a 300K. Determine the peak electric field for this junction for a reverse voltage of 5 V. Emax = O Emax O Emax 3.88 X 105 V/cm Emax 3.21 X 105 V/cm Emax = 1.70 X 105 V/cm 1.35 X 105 V/cm =arrow_forwardQ2. Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in Si is D = 6.5 x 10-11 mm2/s at a temperature of 950°C. Assume the source provides a surface concentration of 1020 atoms/cm3 and the diffusion time is one hour. Assume that the silicon wafer initially contains no phosphorus. Calculate the depth at which the concentration of phosphorus will be 1018 atoms/cm3.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning
Modern Physics
Physics
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Cengage Learning