Essential University Physics: Volume 2 (3rd Edition)
Essential University Physics: Volume 2 (3rd Edition)
3rd Edition
ISBN: 9780321976420
Author: Richard Wolfson
Publisher: PEARSON
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Chapter 37, Problem 52P
To determine

The band gap of Si .

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In a certain semiconductor, the valence band can be approximated by the function E(k) = Eo ak² and the conduction band can be described by the function E(k)= E₁ + 3k². Here E(k) is the electron energy and k is the wavevector. Plot E(k) for the two bands. What is the bandgap of this semiconductor? Is this a direct or indirect bandgap semiconductor?
Problem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be 15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holes decrease with temperature as µejh~ 1/T 32, find the bandgap of this material. Problem 2. You wish to create a 10-k2 resistor using an n-type (Na= 0) silicon bar of length L = 5 mm and cross-sectional area A = 0.05 mm. Assume complete ionization with no = Na and neglect the hole contribution to conductivity. Electron mobility in this material is known to depend on donor concentration according to an empirical formula (see section 6 of the Wikipedia article https://en.wikipedia.org/wiki/Electron_mobility) Hmax - Mmin µ(Na) = Hmin + 1+ (Na/N,)" with the parameters Umin 65 cm²/(V-s), µmax 1330 cm/(V s), N,= 8.5·1016 cm³, a = 0.72. (a) Determine the conductivity of your material needed to obtain the desired resistance. (b) Find the doping concentration needed to obtain the desired resistance. You will need to…
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Chapter 37 Solutions

Essential University Physics: Volume 2 (3rd Edition)

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