Q2:- silicon has electron concentration, no = 3x10° cm and n; =1.5 x 1010 cm; at T=350 K. (a) Determine po. (b) Is this material n or p type? (c) Determine Ec-EF.
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- How many valence electrons does a semiconductor has? a. 2 b. 3 c. 6 d. 4 When pure semiconductor is heated, its conductance a. Goes up b. Goes down C. Remains the same d. Can't say When a trivalent impurity is added to a pure semiconductor, it becomes a. A conductor b. An intrinsic semiconductor C. P-type semiconductor d. N-type semiconductorQ3. The maximum drift velocity of electrons carriers in n-type silicon is approximately 107 cm/s. What is the maximum drift current density that can be supported in the n-type silicon with a phosphorous doping of 10¹7/cm³? Assume n-1200cm²/V.s and Hp 400cm²/V.sConsider an extrinsic semiconductor. Given: /n = 6550 cm² /V sec Mp = 400 cm²/V sec ni = 5.6 x 1012/cm³ Find out the hole and electron concentration in the semiconductor when conductivity is minimum (in cm-³).
- In the figure given we have u(t)=10. cosot [V]. We assume the diodes and the A-meter (A) to be ideal. A u(t) a) Plot the waveform of the current flowing through the A-m in scale. b) What is the reading of the A-m, if it is moving-coil type? c) What is the reading of the A-m, if it is moving-iron type? d) Calculate the power factor of the WHOLE structure. R1 1 R2 102How many free electrons does a p-type semiconductor contain?Please select one:a.Same number as holesb.Manyc.Noned.Only with thermal energyWhich statement(s) is (are) true about a P-N junction: A. P-N junction consists of n-type and p-type semiconductor materials.B. Free electrons in n-type diffuse across junction to p-type.C. A depletion region formation happens due to electrons and holes moving away from each other due to the electric field.
- a) Explain the band structure of an electrical conductor (metal), a semiconductor, and an insulator at 0 K by showing the valence and conduction bands and fermi energy levels. Explain how the electrical conduction takes place in these three types of materials. Give an example for each type of material. b)Explain what n and p-type semiconductors are using their band structures.Q1 A. For the circuit shown, determine the current of D1 and D2. 2_Ohm 1_Ohm 2_Ohm D1 GaAs D2_Si GaAs 1_Ohm 2_Ohm B. For the circuit shown, determine and sketch the output voltages (Vo). (All diodes are Silicon Diodes). 20 V -20 VConsider the circuit shown in Figure 2. The cut-in voltage of each diode is . Let and assume both diodes are conducting. Determine if this is a valid assumption and explain your answer. And calculate the values of IR, ID, Ip2, and V.. Rj =1.7 kQ ww VB =1 V D1 Dz R2D 4 kQ Figure 2
- When a pentavalent impurity is added to a pure semiconductor, it becomes ......... 1. An insulator 2. An intrinsic semiconductor 3. p-type semiconductor 4. n-type semiconductorTake a diode formed by the junction of two type n and p semiconductors. In the figure below is the diagram of the energy bands of these semiconductors, (remember the concept of fermi energy, and knowing that for a pure semiconductor it is in the middle). Based on the figures below, answer a) What is the possible current direction in the direction from p to n or from n to p? b) Explain why the current flow occurs only in one direction.Consider four of semiconductor samples: solid A is orange, solid B is black, solid C is white, and solid D is yellow. Given their colors, rank these semiconductors in order of increasing band gap. A. B < A < D < c B. B < D < A < C C. C < D < A < B D. C < A < D < B