Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 6.3, Problem D6.27E
To determine
A new value for RC so that all fabricated circuits are guaranteed to be in the active mode and the range of collector voltages that the fabricated circuits may exhibit.
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Q6.
a) What is a transistor?
b) Describe the action of npn transistor in detail.
c) Name the possible transistor connections.
d) Show by means of a diagram how you will normally connect external batteries in
i.
PNP transistor
ii.
NPN transistor
e) Describe how a semiconductor will behave at absolute zero temperature.
With Neat sketch explain the construction, operation, VI characteristics, application and features of the power semiconductor device which is having low on state loss and small switching frequency operation
Describe the basic principle of operation of a bipolar junction transistor. Include explanation for the following :
When minority carriers flow across the transistor
Why the collector current is almost unaffected by the collector potential
Chapter 6 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
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- Discussion Theoretically, find the values of input resistance and output resistance of common emitter transistor according to the setup that you have used during the procedures' steps. Compare between theoretical and practical results.arrow_forwardAll field-effect transistors are unipolar rather than bipolar devices. That is, the main current through them is comprised either of through an N-type semiconductor * ..... .....arrow_forwardDraw, Illustrate and label your schematic diagram before solving the problem. 3) Given an Emitter-Stabilize Biased transistor circuit with beta DC is 250,Base resistor is 150 ohms, collector resistor is 1.5k ohms ,emitter resistor is 500 ohms ,emitter voltage supply is -5v and Voltage at common collector is +28V,Voltage at Base-emitter junction is 0.7v,. Determine Base current, Collector current and Voltage at collector-emitter junction.arrow_forward
- "Bias voltage applied to the emitter electrode of a transistor offers greater stability over bias toward its base." Why? How does that actually work? My professor wants a detailed, engineering level explanation for this, and I am struggling to understand this to the degree he is asking. He says having both a positive and negative voltage source at the emitter bias is not necessary, and won't accept this as part of the explanation. Thanks!arrow_forwardQ6) Determine how much the Q-point for the circuit shown in figure (4) will change if e increase from 150 to 220 when one transistor is replaced by another. figure (4)arrow_forwardIn a properly Biased NPN transistor most of the electrons from the emitter A. recombine with holes in the base, B. recombine in the emitter its self, C. pass through the base to the collector, D. are stopped by the junction barrier. In transistor, the relation among emitter current, base current and Collector Current is: A. Ic=IB+IE, B. Ig=IB+Ic, C. IE=Ic-IB, D. I=Ig-Ic. • Transistor is known as bipolar transistor because it has: A. Electrons, В. Holes, C. Electrons and holes, D. None of the above. In NPN or PNP transistor: A. Ic> IE, B. IE >Ic, C. IE = Ic, D. None of the above. The base of an NPN transistor is: A. Heavily doped, B. Lightly doped, C. Medium Doped, D. Doped by pentavalent material. In a transistor the value of a (B) is 100, the value of (a) is: A. 0.01, В. О.1, C. 0.99, D.1.arrow_forward
- 2. Provide a practical example where E-MOSFET and D-MOSFET are used together, explain how how it works.arrow_forward4. The band gap between conduction and valance band in an insulator is (Low Very low High Moderate) 5. Operating point of a transistor must be independent of (Biasing Amplification Variations in parameters Filtration) 6. When a transistor operating at the central of the load line is declining, the current gain will change the Q-point (down up nowhere of the load line) 7. A bipolar junction transistor when used as a switch, operates in (cut-off and active region active and saturation region cut-off and saturation region all of these) 8. Inversion layer in an MOS circuit is made by (doping impact ionization tunnelling electric field) 9. What are the applications of semiconductor devices? (Microprocessors Analog eircuits High voltage applications All of these)arrow_forwardFor the common emitter configuration, the current amplification factor (B) is 90. What will be the value of the current amplification factor (a)? a. 0.5 b. 0.95 c. 0.978 d. 0.989arrow_forward
- In the circuit in the figure, the transistor is silicon and the leakage current value is 20 nA. By what percent does the collector-emitter voltage change in the operation of the circuit at 54 degrees? Take the room temperature 24 degrees. The leakage current doubles for every 6 degree increase. response rate varies between 13% and 24%.arrow_forwardRefer to the figure shown, the collector-base voltage of the transistor if β = 140 isarrow_forwardDraw, Illustrate and label your schematic diagram before solving the problem. 1) Given a Fixed-Biased transistor circuit with Beta DC is 200 , voltage at common collector is +22v ,base supply voltage is +11V, Base resistor is 47kOhms , collector resistor is 390 ohms ,Voltage at Base-emitter junction is 0.7v. Determine the Q-point of collector current and Voltage at collector-emitter junction. These might be help as a guide to solve the problem.arrow_forward
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How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License