Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3.1, Problem 3.1E
To determine
The intrinsic carrier density for silicon.
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Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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- Find the resistivity of a. p-type silicon with NA = 10^10 /cm^3. Determine the value of the concentration of minority charges. CONSTANTS FOR SILICON q= un = Hp = ni = V₂ = 1.6×10-19 C 1350 cm²/Vs 480 cm²/Vs 1.5×10¹⁰ /cm³ 26 mVarrow_forwardCalculate the intrinsic carrier density n, for Silicon at I = 292 K. Show all your work and write your answer with 4 significant figures.arrow_forwardDraw band diagrams for below contacts. b) metal-n-type semiconductor for Φm> Φsarrow_forward
- 2.27 A diode is made by using an n-type Si substrate (D = 4.0 × 1015 cm-³) and then adding acceptors to a concentration of NA = 5.3 × 1017 cm-3 to one region. What are po and no in the p-type region?arrow_forwardof con An p-type piece of silicon experiences an electric field equal to 0.2 V/um. Calculate the velocity of holes in this material. =1350 cm/s, H₂=480 cm/s Select one: O a 9.6x107 m/s O b. 9.6 x 10³ m/s Oc. None of these O d. 9.6x10³ m/sarrow_forwardThe current through the diode in the circuit given in the Figure below when Vy = 0.7 V is? ww 8092 12V Select one a. 24.26 mA b. 13.09 mA c. 58.23 mA d. 40.13 mA 40-52 ww 3092 IDarrow_forward
- 1. Solve for the current through the silicon dio de Assume piecewise-linear diode model with ra 3 50N 30V + Hill and r₂ = IM re MM 1.0K22 1.5km2= 4.7кл 4.7k6 M •arrow_forwardHigh density 6w density to low density low bavyier VoltaJe Higharier, Voltad to high low doPed density atoms Diffusion Curment from Conductivity of Semi conductor In crease with FoYward biased P-N junctionarrow_forwardQ.2 Te diodes m the Cir Cuit of 6iG. below are icdead , Drow the Tran sfer characteristic for 2ovSVi s 2ov ? Di Ri R3 lovarrow_forward
- Q1: In common coordinate systems draw the V-A characteristics of Si diode and Ge diode for T=25C.arrow_forwardAt a temperature of 27 Celsius in silicon, the intrinsic carrier concentration is 1.5 x 1010 /cm³. What is the intrinsic carrier concentration if the temperature is increased to 48 Celsius?arrow_forwardA diode has n = 1.06 at T = 320 K. What is the value of n ·VT? What temperature would give the same value of n·VT if n =1.00 ?arrow_forward
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