Problem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be 15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holes decrease with temperature as leh ~ 1/T 312, find the bandgap of this material.

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Chapter12: The Solid State
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Problem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be
15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holes
decrease with temperature as µejh~ 1/T 32, find the bandgap of this material.
Problem 2. You wish to create a 10-k2 resistor using an n-type (Na= 0) silicon bar of length
L = 5 mm and cross-sectional area A = 0.05 mm. Assume complete ionization with no = Na and
neglect the hole contribution to conductivity. Electron mobility in this material is known to
depend on donor concentration according to an empirical formula (see section 6 of the Wikipedia
article https://en.wikipedia.org/wiki/Electron_mobility)
Hmax - Mmin
µ(Na) = Hmin +
1+ (Na/N,)"
with the parameters Umin
65 cm²/(V-s), µmax
1330 cm/(V s), N,= 8.5·1016 cm³, a = 0.72.
(a) Determine the conductivity of your material needed to obtain the desired resistance.
(b) Find the doping concentration needed to obtain the desired resistance. You will need to
employ some numerical method to solve this problem. The suggested procedure is to use
an iterative solution. Namely, express in terms of conductivity and mobility and use the
old Na-value to determine a better approximation. Repeat this procedure until the result
stops changing.
Transcribed Image Text:Problem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be 15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holes decrease with temperature as µejh~ 1/T 32, find the bandgap of this material. Problem 2. You wish to create a 10-k2 resistor using an n-type (Na= 0) silicon bar of length L = 5 mm and cross-sectional area A = 0.05 mm. Assume complete ionization with no = Na and neglect the hole contribution to conductivity. Electron mobility in this material is known to depend on donor concentration according to an empirical formula (see section 6 of the Wikipedia article https://en.wikipedia.org/wiki/Electron_mobility) Hmax - Mmin µ(Na) = Hmin + 1+ (Na/N,)" with the parameters Umin 65 cm²/(V-s), µmax 1330 cm/(V s), N,= 8.5·1016 cm³, a = 0.72. (a) Determine the conductivity of your material needed to obtain the desired resistance. (b) Find the doping concentration needed to obtain the desired resistance. You will need to employ some numerical method to solve this problem. The suggested procedure is to use an iterative solution. Namely, express in terms of conductivity and mobility and use the old Na-value to determine a better approximation. Repeat this procedure until the result stops changing.
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