A silicon p-n junction has energy of C.B. and V.B. are 0.9ev, 0.1ev respectively at 200°K. the hole and electron mobility, resistivity are 0.16m/v.s, 0.36 m/v.s, 0.00252.m and 0.0052.m. the electric field is 2x10v/m, m'.=0.8mo, m's=0.5m., and t= =10us, find: 1.The Built in voltage. 2. The
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