(b) Copper crystallises as FCC (face centred cubic). Given that the atomic radius and density ofa given copper sample are 1.28 x 10-10 m and 8.98 x 10' kg/m' respectively, carry out the following:(i)Calculate the mass of the copper sample. Take Avogadro's number, NA = 6.023 x 1023atoms/mole.If the interatomic planar spacing, d, in the sample above is 2.96 x 1010 m, determine the angleat which the first Bragg reflection will occur from the (111) plane if x-radiation of wavelength1.52 x 10-10 m is used for the analysis.(ii)

In a FCC crystal structure, there is 1/8th of an atom at every corner of the unit cell, which makes…

Answered: (b) Copper crystallises as FCC (face…

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter7: Quantum Mechanics

Section: Chapter Questions

Problem 7.1CYU: Check Your Understanding If a=3+4i , what is the product a* a?

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(b) Copper crystallises as FCC (face centred cubic). Given that the atomic radius and density of a given copper sample are 1.28 x 1010 m and 8.98 x 10' kg/m' respectively, carry out the following: Calculate the mass of the copper sample. T'ake Avogadro's number, NA = 6.023 x 1023 atoms/mole. (i) (ii) If the interatomic planar spacing, d, in the sample above is 2.96 x 1010 m, determine the angle at which the first Bragg reflection will occur from the (111) plane if x-radiation of wavelength 1.52 x 10-10 m is used for the analysis. (c) Give two uses of pure copper and two commercial applications of copper alloys.
In solid KCI the smallest distance between the centers of a. potassium ion and a chloride ion is 314 pm. Calculate the length of the edge of the unit cell and the density of KCI, assuming it has the same structure as sodium chloride.
Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T=300 K: N. = 4.7 x 1017cm-3 and N, = 7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The hole concentration?
Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T= 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The acceptor concentration?
Silicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?
The intrinsic carrier concentration of silicon (Si) is expressed as - E n₁=5.2×10¹5T¹.5exp- i electrons at 30°C. n = cm -3 g 2kT cm -3 where Eg = 1.12 eV. Determine the density of Round your answer to 0 decimal places.
Hcp structure. Show that the c/a ratio for an ideal hexagonal closed-packed structure is () = 1.633. If c/a is significantly larger than this value, the crystal structure may be thought of as composed of planes of closely packed atoms, the planes being loosely stacked.
(a) What is the minimum donor doping required to convert silicon into a conductor based on the deﬁnitions in Table ? (b) What is the minimum acceptor doping required to convert silicon into a conductor?
The conductivity of a metal is 5.6 x 105 Ohm-¹cm¹ and the density is 8.92 g/cm³ with an atomic mass 62.5 g/mol. Determine the following: i) drift mobility and ii) mean time between the scatterings.
Q7.(Page No.369, 18.9 Exercises, Problem No.3) The resistivity of a sample of germanium is 6.0 x 10-2 m. A cylinder of germanium 5.0 mm long and 0.50 mm in radius has a p.d. of 10 V applied across its ends. (a) What current passes through the specimen? (b) What is the current density (1/A) in the sample?
silicon has electron concentration, no = 3x1016 cm3 and n; =1.5 x 1010 cm-3; at T=350 K. (a) Determine Po. (b) Is this material n or p type? (c) Determine E-EF.
(Electroplating) A steel part with surface area A = 130 cm² is to be tin-plated. What average plating thickness will result if 15 amps are applied for 10 min in an acid sulfate electrolyte bath? The cathode efficiency for tin is E = 90% and the plating constant C = 4.21 x 10-2 mm³/amp-s. V = CIt V = ECIt d = V A Typical cathode efficiencies in electroplating and values of plating constant C. Compiled from [18]. Plate Metal Electrolyte Cadmium (2) Cyanide Chromium (3) Chromium-acid-sulfate Copper (1) Gold (1) Nickel (2) Silver (1) Tin (4) Zinc (2) Cyanide Cyanide Acid sulfate Cyanide Acid sulfate Chloride Plating Constant ca Cathode Efficiency % mm³/amp-s (in³/amp-min) 6.73 × 10-² (2.47 × 10-4) X 2.50 × 10-2 (0.92 × 10-4) 7.35 x 10-2 10.6 x 10-² 3.42 x 10-2 (2.69 × 10-4) (3.87 × 10-4) (1.25 × 10-4) 10.7 x 10-2 (3.90 × 10-4) 4.21 x 10-2 (1.54 × 10-4) 4.75 × 10-2 (1.74 x 10-4) 90 15 98 80 95 100 90 95 ¹Most common valence given in parentheses (); this is the value assumed in determining…

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