Consider a silicon pn junction at T = 300 K Assume the doping concentration in then region is102cm and the doping concentration in the pregion is 1ore and assume that a forward biasof 0.30 V is applied to the pn junction. Nate/ n = 5 ×10Calculate the minority carrier concentration at the edge of the space charge regions.

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Consider a silicon pn junction at T = 300 K 10 cm and the doping concentration in the p region is 10em of 0.30 V is applied to the pn junction. Note/ n, = 15 x10 cm Assume the doping concentration in the n region is and assume that a forward bias Calculate the minority carrier concentration at the edge of the space charge regions.

Consider a silicon pn junction at T = 300 K 10 cm and the doping concentration in the p region is 10em of 0.30 V is applied to the pn junction. Note/ n, = 15 x10 cm Assume the doping concentration in the n region is and assume that a forward bias Calculate the minority carrier concentration at the edge of the space charge regions.

Glencoe Physics: Principles and Problems, Student Edition

1st Edition

ISBN:9780078807213

Author:Paul W. Zitzewitz

Publisher:Paul W. Zitzewitz

Chapter29: Solid-state Electronics

Section29.1: Conduction In Solids

Problem 17PP

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