Wires A and B, having equal lengths of 42.6 m and equal diameters of 2.87 mm, are connected in series. A potential difference of 63.3 V is applied between the ends of the composite wire. The resistances are RA = 0.111 Q and Rg = 0.637 Q. For wire A, what are (a) magnitude J of the current density and (b) potential difference V? (c) Of what type material is wire A made (see the table below)? For wire B, what are (d) J and (e) V? (f) Of what type material is B made? Resistivities of Some Materials at Room Temperature (20°C) Resistivity, p (N-m) Material Silver Copper Gold Aluminum Manganin Tungsten Iron Platinum Silicon, pure Silicon, n-type Silicon,p-type Glass Fused quartz Typical Metals 1.62 x 10-8 1.69 x 10-8 2.35 x 10-8 2.75 X 10-8 4.82 x 10-8 5.25 x 10-8 9.68 x 10-8 10.6 × 10-8 Typical Semiconductors 2.5 × 10³ 8.7 x 10-4 2.8 x 10-3 Typical Insulators 10101014 -1016 Temperature Coefficient of Resistivity, a (K-¹) 4.1 x 10-3 4.3 × 10-3 4.0 × 10-3 4.4 x 10-3 0.002 × 10-3 4.5 x 10-3 6.5 x 10-3 3.9 x 10-3 -70 × 10-³ "An alloy specifically designed to have a small value of a. *Pure silicon doped with phosphorus impurities to a charge carrier density of 10²3 m³. "Pure silicon doped with aluminum impurities to a charge carrier density of 102³ m-³.
Wires A and B, having equal lengths of 42.6 m and equal diameters of 2.87 mm, are connected in series. A potential difference of 63.3 V is applied between the ends of the composite wire. The resistances are RA = 0.111 Q and Rg = 0.637 Q. For wire A, what are (a) magnitude J of the current density and (b) potential difference V? (c) Of what type material is wire A made (see the table below)? For wire B, what are (d) J and (e) V? (f) Of what type material is B made? Resistivities of Some Materials at Room Temperature (20°C) Resistivity, p (N-m) Material Silver Copper Gold Aluminum Manganin Tungsten Iron Platinum Silicon, pure Silicon, n-type Silicon,p-type Glass Fused quartz Typical Metals 1.62 x 10-8 1.69 x 10-8 2.35 x 10-8 2.75 X 10-8 4.82 x 10-8 5.25 x 10-8 9.68 x 10-8 10.6 × 10-8 Typical Semiconductors 2.5 × 10³ 8.7 x 10-4 2.8 x 10-3 Typical Insulators 10101014 -1016 Temperature Coefficient of Resistivity, a (K-¹) 4.1 x 10-3 4.3 × 10-3 4.0 × 10-3 4.4 x 10-3 0.002 × 10-3 4.5 x 10-3 6.5 x 10-3 3.9 x 10-3 -70 × 10-³ "An alloy specifically designed to have a small value of a. *Pure silicon doped with phosphorus impurities to a charge carrier density of 10²3 m³. "Pure silicon doped with aluminum impurities to a charge carrier density of 102³ m-³.
Chapter9: Current And Resistance
Section: Chapter Questions
Problem 28P: An aluminum wire 1.628 mm in diameter (14-gauge) carries a current of 3.00 amps, (a) What is the...
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Transcribed Image Text:Wires A and B, having equal lengths of 42.6 m and equal diameters of 2.87 mm, are connected in series. A potential difference of 63.3 V
is applied between the ends of the composite wire. The resistances are RA = 0.111 Q and Rg = 0.637 Q. For wire A, what are (a)
magnitude J of the current density and (b) potential difference V? (c) Of what type material is wire A made (see the table below)? For
wire B, what are (d) J and (e) V? (f) Of what type material is B made?
Resistivities of Some Materials at Room Temperature (20°C)
Resistivity, p
(N-m)
Material
Silver
Copper
Gold
Aluminum
Manganin
Tungsten
Iron
Platinum
Silicon, pure
Silicon, n-type
Silicon,p-type
Glass
Fused quartz
Typical Metals
1.62 x 10-8
1.69 x 10-8
2.35 x 10-8
2.75 X 10-8
4.82 x 10-8
5.25 x 10-8
9.68 x 10-8
10.6 × 10-8
Typical Semiconductors
2.5 × 10³
8.7 x 10-4
2.8 x 10-3
Typical Insulators
10101014
-1016
Temperature Coefficient
of Resistivity, a (K-¹)
4.1 x 10-3
4.3 × 10-3
4.0 × 10-3
4.4 x 10-3
0.002 × 10-3
4.5 x 10-3
6.5 x 10-3
3.9 x 10-3
-70 × 10-³
"An alloy specifically designed to have a small value of a.
*Pure silicon doped with phosphorus impurities to a charge carrier density of 10²3 m³.
"Pure silicon doped with aluminum impurities to a charge carrier density of 102³ m-³.
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