Tunnel Diode device is a. none of the options b. Basic p-n junction but with both materials very heavily doped with acceptor and donor atoms respectively c. presented when a p-n junction is subjected to a small negative voltage, a small depletion layer is formed where no electrons exist in the conduction bands or holes in the valence band d. in which the electrons in the conduction band is of the n-type material is drawn towards the positive charge

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Chapter29: Solid-state Electronics
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Problem 67A
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Tunnel Diode device is
a. none of the options
b. Basic p-n junction but with both materials very heavily doped with acceptor
and donor atoms respectively
c. presented when a p-n junction is subjected to a small negative voltage, a
small depletion layer is formed where no electrons exist in the conduction
bands or holes in the valence band
d. in which the electrons in the conduction band is of the n-type material is
drawn towards the positive charge
Transcribed Image Text:Tunnel Diode device is a. none of the options b. Basic p-n junction but with both materials very heavily doped with acceptor and donor atoms respectively c. presented when a p-n junction is subjected to a small negative voltage, a small depletion layer is formed where no electrons exist in the conduction bands or holes in the valence band d. in which the electrons in the conduction band is of the n-type material is drawn towards the positive charge
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