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- 4 Q: A- For the transistor circuit shown in figure bellow 20 v Determine: 1- Ig , Ic , le and Vce · 2- Sketch the load line (Q-point) of the transistor. 470 2 270 kQ B=125 تمت الاجابة وسارفع الملف لاحقاDetermine the voltage across the diode in Figure below, assuming silicon diode IM+ 5 V Μ 10 Ho 8 V -31 Ο 7V O ον Ο 4v ΟAn ac voltage of peak value 20v is connected in series with a silicon diode and load resistance of 5002. if the forward resistance of diode is 10Q find: i- Peak current through diode. ii- Peak output voltage. iii- What will be these values if the diode is assumed to be ideal (Vdiode =0)?
- Re 14.4 V 11.4 V Rg 8 kohm 12 kohm 12 V 20 V le(mA) A !g-1.425 mA Vee(Volt) Answer the questions given below, since they are taken from the circuit next to the output chart given above a) What common transistor configuration is the given circuit diagram? b) what type is the given transistor? NPN or PNP? SpecifyA 18 V peak-to-peak sinusoidal voltage is applied across a silicon diode and series resistor. The maximum voltage across the diode is O 17.3 V O 14.3 V O 18v O 0.7 V O 9v O 10v O Other:The function of zener diode is to provide a constant output voltage to a load. this process is called One types of diodes are typically used for power supply applications which always called In a circuit that composed of a single diode that connects an AC source to a load. the diode acts as function of Zener diode is widely used as
- 10. The capacitance of a Au-n-GaAs Schottky-barrier diode is given by the relation 1/C² = 1.57x1015 - 2.12×1015 V, where C is expressed in µF and V is in volts. Taking the diode area to be 0.1 cm?, calculate the built-in potential, the barrier height, and the dopant con- centration.Two silicon diodes, with a forward voltage drop of 0.7 V, are used in the circuit shown in the figure. The range of input voltage Vi for which the output voltage VO = Vi is - R D₂ D₁ -1 V DC -0.3 V< Vi < 1.3 V O -1.0 V< Vi < 2.0 V -0.3 V< Vi < 2 V O-1.7 V< Vi < 2.7 V Vo 2 V VoWhen the forward bias voltage of a diode is changed form 0.6V to 0.7V, the current changes form 5 mA to 15 mA. Then its forward bias resistance is A. 0.01 N B 10 0 Qo.1A
- In a junction diode, a) The charge carriers do not flow by diffusion from the p-type side to the n-type side and vice versa. b) The depletion capacitance decreases with increase in the reverse bias. c) The depletion capacitance increases with increase in the reverse bias. d) The diffusion capacitance increases with increase in the forward bias.The type of circuits shown in figure is +10 V V. Ov -10v + O O O A (A) ✓ Ideal diodes (C) R www 1.0 kf 2.2 ΚΩ You +200 V Vov O Other: -200 V V₂ a C Ht Ideal R₁ ww 100 f (D) R₁ 6800 50 V + A) clipper B)FWR C)Negative clipper D) Negative clamper A) HWR B)FWR C)Negative clipper D) Positive clamper V A) Positive clipper B)FWR C)Negative clipper D) Negative clamper A) Positive clipper B)Negative clipper C)FWR D)Negative clamper A) Positive clipper B)Negative FWR C)Negative clipper D) Negative clamper2) Consider a two terminal semiconductor diode a) Calculate the thermal voltage of a diode at room temperature about 27°C. b) Calculate diode dynamic resistance in case of 13 mA diode current. (Boltzman's constant is 1.38x10-23 J/K, and magnitude of electron charge is 1,6X10-19 C)