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- Q1/ Consider the depletion load transistor based at Voo - 3 V. Vtn=-2 V, Vtno 0.7 V, (W/L)p-10, such that the maximum power dissipation is 320 μW, when VI-3 V. And Kn=60μA/V, Determine the output voltage.Useful Constants: k = 9.00 × 10º Nm² C2 €0 = 8.85 × 10–12 C² Nm2 e = 1.6 × 10¬19C %3D mẹ = 9.11 x 10~31 kg %3D 27 kg = 1.67 × 10 mp mn = 1.68 × 10-27kgThe magnetic field strength in silicon is 1000 A/m. If the magnetic susceptibility is - ( 0.3 x 105), what is the magnetization M? O A. 3 x 1o A/m O B. -1.5 x 105 A/m C. -3 x 10s A/m The superconducting state has OA. same entropy as the normal state O B. lower entropy than the normal state O C. higher entropy than the normal state. Clear my cholce
- 3. Show that in an ideal hexagonal-close-packed (hcp) structure, where the atomic spheres touch each other, the ratio c/a is given by :-()* ( 8 \ 1/2 = 1.633. (The hep structure is discussed in Section 7.) 4 The packing ratio is defined as the fraction of the total volume of the cell that is filled by atoms. Determine the maximum values of this ratio for equal spheres located at the points of simple-cubic, body-centered-cubic, and face-centered-cubic crystals.Question 1 a) Ina closed circuit, an electric current of intensity i goes through a resistor of resistance R. The electric potential at the edges of R is measured to be V. If now we write R would this generally bethe definition ofthe resistance quantity R, or the expression of Ohm's Law? Explain. b) We define the resistivity (via the familiar notation) as E p= Thus show that the resistance R can be written as, R =p- here Lis the length ofthe resistor, and A is the cross-sectional area ofit. c) Let J the curent density (i/A). Express J in tems of the electron density n (electrons/m), the electron drift velocity va, and the electron charge e. d) Show that the resistivity can be expressed (via the familiar notation) as, m p= ne't here m is the electronmass; t is the period of time that elapses between two subsequent collisions, the electron undergoes with copper nuclei throughout its chaotic motion in the body of copper (supposing that the current carrying cable is made of copper). Hint:…A silicon p-n junction consists of a p-type region containing 3x1016 cm-3 acceptors and an n- type region containing also 1017 cm-3 donors. a. Calculate the density of electrons and holes in both p-type and n-type regions under thermal equilibrium at room temperature. b. Calculate the built-in potential of the p-n junction? c. Calculate the width of the depletion layer under a reverse bias of 1.0 V. d. Based on c, calculate the junction capacitance. Note that the junction cross-session area is 1.2 mm2.
- a) Calculate the characteristic temperature associated with a vibrational energy level transition of angular frequency ω = 2×1013 rad s-1 . b). A process “freezes out” at temperatures below 42 K. Calculate the typical energy associated with this process.Question 39 The apparatus shown in the picture was used to measure the cell potential during the titration of 100.0 mL of 0.125 M KCI with 0.500 M AGNO3 (Ksp AgCI = 1.8 x 10-10). Calculate the cell potential at the following points: a) 5.00 mL before Veg b) at Veg c) 5.00 mL after Veg V SCE Ag Half-cell reaction : Ag* + e-→ Ag E° = 0.799 3 V and potential of SCE is 0.241 VOperating point represents.…... A. Values of Vce and Iç when signal is applied B. The magnitude of signal C. Zero signal values of Vce and Ic D. None of the above C D В A CLEAD MY CHOICE
- An ideal rectifying contact is formed by depositing gold on n-type silicon doped at 1015 cm-3. At T= 300 K, determine the width of the depletion region. W = 9.540 X 10-4 cm W = 2.244 X 10-4 cm W = 1.033 X 10-4 cm W = 4.151 X 10-4 cm(Electroplating) A steel part with surface area A = 130 cm² is to be tin-plated. What average plating thickness will result if 15 amps are applied for 10 min in an acid sulfate electrolyte bath? The cathode efficiency for tin is E = 90% and the plating constant C = 4.21 x 10-2 mm³/amp-s. V = CIt V = ECIt d = V A Typical cathode efficiencies in electroplating and values of plating constant C. Compiled from [18]. Plate Metal Electrolyte Cadmium (2) Cyanide Chromium (3) Chromium-acid-sulfate Copper (1) Gold (1) Nickel (2) Silver (1) Tin (4) Zinc (2) Cyanide Cyanide Acid sulfate Cyanide Acid sulfate Chloride Plating Constant ca Cathode Efficiency % mm³/amp-s (in³/amp-min) 6.73 × 10-² (2.47 × 10-4) X 2.50 × 10-2 (0.92 × 10-4) 7.35 x 10-2 10.6 x 10-² 3.42 x 10-2 (2.69 × 10-4) (3.87 × 10-4) (1.25 × 10-4) 10.7 x 10-2 (3.90 × 10-4) 4.21 x 10-2 (1.54 × 10-4) 4.75 × 10-2 (1.74 x 10-4) 90 15 98 80 95 100 90 95 ¹Most common valence given in parentheses (); this is the value assumed in determining…Q1/ Consider the depletion load transistor based at VoD-3 V, Ven=-2 V, Vtnp= 0.7 V, (W/L)D=10, such that the maximum power dissipation is 320 μW, when VI = 3 V. And Kn= 60μA/V, Determine the output voltage.