A number of metal-semiconductor (MS) contacts are formed on Ge, Si, and GaAs substrates maintained at room temperature. For one or more of the MS parameter combinations listed below, (a) draw the equilibrium energy band diagram characterizing the MS contact. (b) present a reason to confirm the ohmic or rectifying nature of the contact.
A number of metal-semiconductor (MS) contacts are formed on Ge, Si, and GaAs substrates maintained at room temperature. For one or more of the MS parameter combinations listed below, (a) draw the equilibrium energy band diagram characterizing the MS contact. (b) present a reason to confirm the ohmic or rectifying nature of the contact.
Modern Physics
3rd Edition
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Chapter12: The Solid State
Section: Chapter Questions
Problem 12P
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Question
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A number of metal-semiconductor (MS) contacts are formed on Ge, Si, and GaAs substrates maintained at room temperature. For one or more of the MS parameter combinations listed below,
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(a) draw the equilibrium energy band diagram characterizing the MS contact.
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(b) present a reason to confirm the ohmic or rectifying nature of the contact.
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