5. Given a JFET transistor with Ips=10 mA and V, =-4 V, a) Sketch its transfer characteristics. Hint: Use at least 5 points to draw the curve. b) If this JFET transistor is used in the following fixed-bias configuration, determine I,, Vas , Ve, Vs and V, at the Q-point using a purely mathematical approach. VDp = 12 V R,$ 2.2 k2 1 MQ + + DS VGG Ro Vas GS 2 V +

5. Given a JFET transistor with Ips=10 mA and V, =-4 V, a) Sketch its transfer characteristics. Hint: Use at least 5 points to draw the curve. b) If this JFET transistor is used in the following fixed-bias configuration, determine I,, Vas , Ve, Vs and V, at the Q-point using a purely mathematical approach. VDp = 12 V R,$ 2.2 k2 1 MQ + + DS VGG Ro Vas GS 2 V +

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Given the MOSFET in Figure 6 has bran) = 200 mA at VGs = 4 V and V(Tn) = 2 V; i. Plot the transfer characteristic curve for the MOSFET. b) i. Determine the operating point Vasa, Ioa and Vosa for the circuit. ii. Calculate the value of the transconductance gm at the Q-point. iv. Determine the voltage gain and input impedance of the amplifier. 15 V 1 kn. Coe 1.5 M2. Cin 33 kn. Vn 30 ka Figure 6
For the circuit of Figure 2. Carry out the analysis in DC and small signal with www.w www www.www Vt=0.7 V, Kn(W/L) = 4 mA/V. Ignore the Early effect. Determine: (a) The current in DC ID. (b) The gains vo/v₁, io/ii (c) The input resistance Rin and output resistance Rout. wwwwww 06402 www Ca HH {ama Ο ΜΩ www.11 Figura 2: 0.51 k www.li 12 V • 27 ΚΩ Ca +1₁ -0% 4.7 k
A silicon transistor is biased with base resistor method. If B=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the %3D value of the base resistor RB? Select one: a. 530 kQ b. 105 kQ c. 315 k. d. None of the above
Example 7 For the circuit shown, use R1=R2=47k2, RE=5.7k 22, RC=3.3k , RL=10k 2 and Vcc=12V, VBE=0.7V, B=100, IB=8.48uA 1-Draw the DC equivalent circuit. 2-Find the required parameter for the AC small signal model. 3-Draw the small signal model 4-Calculate the voltage gain. 5-Find the input impedance. 6-Find the output impedance. IB=8.84uA, IC=0.884mA, gm-35.36mA/V r=2.828KM. Usig Rin Gain=- 87.74, Rin=2.524k , Rout=3.3k Vcc R₁ R₂ Rc RE RL ww V Vo
Vsis (~ Q3 (a) What is the advantage of using MOSFET as compared to BJT at the first stage of multi-stage amplifier? Rais 600 02 www Z₁ (b) Describe the function of the capacitor for the following condition: (1) (ii) SEEE/SKEE 1073 (c) The transistors parameters in Figure Q.3 are given as follow: BJT (iv) ↑ B-350, VBE 0.7 V, Ic=0.3 mA, VT 26 mV, and ro=00 E-MOSFETk 0.8 mA/V², VT- Vas(T) = 1 V C₁ HE a capacitor between stage 1 and stage 2 of a RC-coupled amplifier. bypass capacitor which is commonly used in small signal amplifier. (i) Draw the ac equivalent circuit at middle frequency for circuit in Figure Q.3 by using hybrid-x model. (ii) Determine the values of Z., Ziz and Zo. (iii) Calculate the gain, v/v, in decibel (dB). Draw and label the waveforms vo when v=2 sin 50t [mV] for one complete cycle. + Roi 50 ΚΩ Vi Ra 6 kn Ro 4.5 k Q₁ Rs 3 kQ C₂ не +15 V DS ↑ 22 R₁ 75 k R₂ 9 kn Figure Q.3 Multistage amplifier circuit Re RE 2kQ Rez 1kQ ← 2₂ -C₁ R₂ 20k2 %
4. For the transistor in the figure shown below, the parameters are ß = 100 and VÀ = ∞. a. Design the circuit such that lEQ = 1mA and the Q-pt is in the center of the dc load line. b. If the peak-to-peak sinusoidal output voltage is 4V, determine the peak-to-peak sinusoidal signals at the base of the transistor and the peak-to-peak value of Vs. If the load resistor R₁ = 1kQ is connected to the output through a coupling capacitor, determine the peak-to-peak value in the output voltage, assuming vs is equal to the value determined in part (b). Vcc=+10 V www Rs = 0.7 kΩ Cc www RB RE vo
In the figure, A characteristics curve is shown for the MOSFET. Determine the following outcome and parameters using the values given in the characteristics: i) Find the Ip for the VGs = 4V, where IGs(ON) = 4.5mA ii) Find the transconductence of MOSFET; where, MOSFET having the bias voltage VGs = 4V, and 6V. %3D A (mA) A5 (mA) 10 10 VGs=+8 V 9. 7 .7 VGs =+7 V 6 5 Vas=+6 V 4 VGs =+5 V 2 VGs =+4 V Vas =+3 V 1 3 4. 5 8 Vas 10 15 20 25 Vos Vas = VT=2 V a co
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Most of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layers
1.The voltage measured from the collector to the emitter is the sum of the voltage base-emitter plus the voltage collector-base. Select one: True Or False 2.A decrease in base current of a C-E amplifier causes the voltage measured between the emitter and the collector to increase. Select one: True Or False 3.A FET is ..............controlled device whereas a bipolar transistor is a.............controlled device. Answer:
Current and impedance levels of push-pull RF amplifier. Solid-state RF power amplifiers that provide more than 50 W or so must deal with very large currents, because the typical silicon RF BJT or PET cannot with-stand a DC collector voltage higher than about 40V. (Newer devices using materials such as silicon carbide can exceed this voltage limitation and provide greater power for the same current level.) Suppose a push-pull RF amplifier using a DC collector voltage of 36 V must provide a total peak RF output power of 200W. Typically, the AC "swing" (peak-to-peak AC excursion) of voltage at the collectors cannot exceed twice the DC power-supply voltage. (a) If each of the two devices in the push-pull amplifier delivers IOOW and has a peak-to-peak voltage of (2 x 36) = 72 V across its output terminals , what is the peak current I at the collector of each device, assuming . "d C(PK) smus01 al voltage and current? (b) At this current IC<PK >' how much series inductance L at a…
In order to express the effect of the internal capacitors of BJT and the high frequency reception, the current gain expression depending on the frequency (Figure b) (hfe) is used in the case of collector emitter short circuit, voltage source connected at base end and emitter grounded (Figure la).. The catalog information of the 2N2222 transistor is given in Figure Ic. In the catalogue, when Ic=20 mA, it is seen as fT=250 MHz. a) Find the total capacitor effect for the case where gm> > wCμ. (Cpi) + (Cμ) = ?pF