The transistor has the following properties: hte = hFe = B = 100, |VBEl = 0,6V, VT = 26mV and VA = 00. The resistor values areR81=44k2, R82=22kn, RE=3.9k2, Rc=1.842. Calculate the output impedance of this amplifier circuit.Vcc10VRB1RE|VBE|=0.6VBr=100C2 VoRB2RC

The transistor has the following properties: he = hFE = B = 100, IVBE| = 0,6V, VT = 26mV and VA = 00. The resistor values are R81=44kN, Rg2=22kn, RE=3.9kn, Rc=1.842. Calculate the output impedance of this amplifier circuit. %3D %3D %3D Vcc 10V RBI RE CE |VBE-0.6V B=100 HH C2 Vo RB2 Rc

The transistor has the following properties: he = hFE = B = 100, IVBE| = 0,6V, VT = 26mV and VA = 00. The resistor values are R81=44kN, Rg2=22kn, RE=3.9kn, Rc=1.842. Calculate the output impedance of this amplifier circuit. %3D %3D %3D Vcc 10V RBI RE CE |VBE-0.6V B=100 HH C2 Vo RB2 Rc

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Related questions

Q: Determine IDQ and VGSQ for voltage divider bias configuration for the JFET using graphical analysis.…

A: First, note that the current (IG) through the gate is zero, and hence, find the gate voltage…

Q: + 12 V RC1 C2 1.5 k Consider the shown common emitter amplifier circuit. Given that RC2 RL IBQ =…

A: We need to perform DC and ac analysis for comman emitter amplifier.

Q: In the circuit in the way, Vcc = 12 V, Vin = 650 mv, RB = 780 kO, RC1 = 21 Q, RC2 = 21.1 0, RE = 470…

Q: Determine the value of Vx and the mode of operation for the PNP transistor shown below. Assume Is =…

A: Vb = 1.2 V VE = VCC = 2 V Betta = 50 VA = infinite RC = 0.1 K ohm VCC = 2V . VX= ?

Q: VDp Rc RBI Cout Cin Vout Vin RB2 RE CE oV Figure Q3a : Common Emitter Amplifier d) Using the above…

A: Part (d): It is known that the capacitors act as a short circuit for high-frequency sources. Also,…

Q: Figures Q3(a)(i) and Q3(a)(ii) below show the biasing of a transistor to achieve certain signal…

Q: Design the circuit below to obtain a dc emitter current Ie=1.2 mA, using a power supply Vcc= 12V.…

A: For the given circuit,Power supply, VCC=12VDC emitter current, IE=1.2mAβ=110andVoltage divider…

Q: Q4: The amplifier shown below consists of two identical common emitter amplifiers connected in…

A: We will do dc analysis and then we will ac analysis .

Q: If the multistage amplifier is driven by a 1 µV source and the last stage is loaded with an RL = 20…

A: First we will do dc analysis to find out transconductance then we will find gain of individual stage…

Q: 24Vdc is applied as the Vcc of a Common-Emitter amplifier. Which of the following sets of dc voltage…

A: For a Transistor to be in active region base to emitter voltage should be near 0.7V ( assume silicon…

Q: In the circuit in the figure, Vi = 20 mV, VCC = 15 V, β = 110, r0 = 30 kΩ, RC = 4.7 kΩ, RF1 = 100…

A: First we will find ac parameters by DC analysis then we will do ac analysis to calculate output…

Q: If the multistage amplifier is driven by a 1 pV source and the last stage is loaded with an R = 20…

Q: a) The amplifier shown in Figure 4a has been designed to have the operating point: Ic = 2 mA, VCE =…

A: First we will find out resistance value for given resistor then we will find input and output…

Q: %3D The transistor has the following properties: hfe = hFE = B = 100, |VBE| = 0,6V, V, = 26mV and VA…

A: Given circuit is shown below. Given data is hfe=β=100, VBE=0.6V and thermal voltage VT=26mV, early…

Q: For a common-emitter amplifier, RC = 1 k2, RL = 3 kQ, R. 75. Assuming that R is Not bypassed, the…

A: conder the given question;

Q: JFET transistor was used in RC coupled amplifier (CS bypass - voltage divider) with internal source…

A: Solution- Given, Ri =25 kohmRG = 8 kohmRD = 8 kohmRL = Load resistancegm = Transconductance of JFET…

Q: Consider the circuit shown in the figure below. The circuit parameters are: V+ = 5 V, V- = -5 V, RS…

A: High-frequency modeling of the system will be

Q: In the circuit below, VCC=10V, RB1=12kN, RB2=4kN, RC=2kN, RE=1kN, VBE=1V, hfe=300, If VT=26mV,…

A: PROCEDURE TO DRAW EQUIVALENT CIRCUIT: Draw the equivalent circuit of the transistor. Connect the…

Q: (a) What is the total input capacitance in the circuit as shown if Cπ = 20 pF, Cμ = 1 pF, IC = 5 mA,…

A: Given Cπ=20 pFCμ=1 pFIC=5 mARL=1 KΩ Calculating transconductance gm=ICVTgm=5 mA25 mVgm=200 mS

Q: Consider the circuit below, the parameters of the transistor are: B = 100, VT = 0.025 V, VBE(ON) =…

A: We need to find out the gain for given circuit .

Q: In the circuit in the figure, Vi = 20 mV, VCC = 15 V, β = 110, r0 = 30 kΩ, RC = 4.7 kΩ, RF1 = 100…

A: First we will find out Gain then we will find out output voltage for given input voltage .

Q: d. For the next two questions, consider the common emitter amplifier below with beta=100 and…

A: According to the company guidelines we can solve only first three sub parts kindly

Q: Given: R1 = 100 kΩ R2 = 56 kΩ RC = 2 kΩ VCC = +8 V Ib = 20.4µA Ic = 2.04 mA Vce = 3.88V Assume…

Q: Q5) Design the BJT amplifier circuit shown below to have a (A, = -5), (Zin (Z. = 2 kn), (Z. = 1.8…

Q: 1. The de emitter current IE is: A. 2.62 mA 2. The ac resistance re is: A. 8.67 2 B. 9.9222 3. The…

A: We are authorized to answer three subparts at a time, since you have not mentioned which part you…

Q: Vec=+12V RC 1k2 R 470k2 . вс107 Vc Ve Figure 3: Practical Fixed Bias Transistor Circuit Measure the…

A: Solution :- Apply Kirchoff's voltage law in above question in the input side :- VCC - IBRB -VBE =…

Q: B : In the circuit of the figure shown. The Ge transistor is characterized by = 100KN ,B=50, Iceo…

Q: In the circuit in the figure, Vi = 20 mV, VCC = 15 V, β = 110, r0 = 30 kΩ, RC = 4.7 kΩ, RF1 = 100…

A: Given : In the question they want to know the value of output voltage of the given amplifier…

Q: Attached please find plot of my question regarding Mosfet Transistor. For a Enhancement type…

A: DC analysis of the amplifier will be

Q: Q1. In the MOSFET circuit shown in Figure 1, the transistor has k"- = 3.2 mA/V² , a=0, V, =1.2 V. L…

Q: The transistor has the following properties: hfe = hFE = B = 100, |VBe| = 0,6V, VT = 26mV and VA =…

A: AC Analysis : 1. Make all Dc source to ground 2.Short circuit All capacitors 3.draw Equivalent…

Q: What is the voltage gain (Av) of the circuit when = 100, ro = 40 kn, RB = 360 kn, RC = 3.3 ko, RE =…

A: Given common emitter amplifier is shown below Given data is β=100, RB=360kΩ, RC=3.3kΩ, RE=220Ω,…

Q: Vcc +12V Rc R CH1 2.7K Cout Vout 10K CH2 Cin BC107 2.2µF 2.2µF RL RE1 1202 0.2Vpp R2 10K 3.3K f=…

A: TRANSISTOR BIASING: The main and the most important function of a transistor is to do amplification.…

Q: GIven a common-emiter amplifier circuit, witn: VCC = 15 V, Vin = 5 mV, ß = 110 A/A, VT = 25 mV, Is =…

Q: Table 1 Is = 100 µA VCE (V) Ic (mA)| VCE (V) Ic (mA) | VCe (V) | Ic (mA) Is = 50 µA Is = 150 µA %3D…

A: OUTPUT CHARACTERISTICS OF COMMON EMITTER CONNECTION: It is the curve between collector current IC…

Q: Vcc RC1 RB RC2 C1 Q1 Vin- NPN C Q2 NPN C2 Vo RE RL

A: TRANSISTOR BIASING: The main and the most important function of a transistor is to do amplification.…

Q: Vcc Rc RF2 RF1 C2 C3 Z,

A: We will do DC and AC Analysis to calculate value of output voltage .

Q: Calculate the common-mode output voltage and A, voltage gain for the circuit below, where V = 5mV,…

Q: In the MOSFET circuit shown, the transistor has V= 1.0 V, k = 20 µAN, L=4 um, W = 100 µm and i=0.…

A: Here the figure shows source follower circuit to calculate ID , first we have to know the region of…

Q: Vcc +12V Rc R, CH1 2.7K Cout Vout 10K CH2 Cin BC107 2.2µF Vs 2.2µF RE1 RL 0.2Vp R2 1202 10K PP 3.3K…

A: TRANSISTOR BIASING: The main and the most important function of a transistor is to do amplification.…

Q: Assume that the transistor parameters are VTN = 0.8 V and K, = 0.80 mA/V², Given VpD= 5V and R1+ R2…

A: VDD = 5V ID = 0.88mA VTN =0.8V Kn = 0.8mA/V2 R1 +R2 = 670KΩ R1 ? R2 ? RD ?

Q: In the circuit shown all transistors are identical with B = 80. We give R1 such that Iq = 4 mA , R2…

Q: current of 0.8mA, using transistors ratio of 100, µ,Cox = 0.2mA/V2, v Rp = 5k2. Find the value of…

Q: Please Answer the following: In the circuit shown, if the transistor has V, = 1.1 V, kn = 1.3 mA/V²,…

A: We need to analysis MOSFET amplifier. We will calculate all parameters .

Q: Q1. In the MOSFET circuit shown in Figure 1, the transistor has W k"= 3.2 mA/V , 2=0, V, =1.2 V. (a)…

Q: Q1. For the circuit given in the figure below B=100. Calculate the value of V, that produces Vo…

A: Transistor: Transistor generally acts as an amplifier. It’s generally used to amplify a weak…

Q: Please analyze the circuit and determine the voltage gain of both (Av,dc = Vc/Vb for DC analysis)…

A: We will do DC and ac analysis to find out gain and input impedance and output impedance .

Q: In the circuit in the figure, Vi = 20 mV, VCC = 15 V, β = 110, r0 = 30 kΩ, RC = 4.7 kΩ, RF1 = 100…

A: Given:

Q: "Given a common emiiter amplifier (Voltage Divider) with the following network: R1 = 22k, R2 = 6.8k,…

A: To calculate the input impedance of Common Emitter amplifier (voltage divider)

Q: In the two- stage amplifier circuit given in the figure, the parameters of both transistors are…

Q: RS=RC1=RE1==3k, R1=100k, R2=25k, R3=500k, RE2=6k, RL=4k, β1=100, β2=200,VBE1=VBE2=0.7V, VT=26mV)…

Concept explainers

Power Amplifier

The power amplifier is an electronic amplifier designed to maximize the signal strength of a given input. The input signal strength is enhanced to a high enough level to drive output devices such as speakers, headphones, RF (Radio frequency) transmitters, etc. Unlike voltage / current amplifiers, the power amplifier is designed to drive core loads directly and is used as a storage block in the amplifier series.

Maximum Efficiency Criterion

In every field of engineering, there is a tremendous use of the machine and all those machines are equipped for their popular work efficiency so it very much important for operation engineers to monitor the efficiency of the machine, planning engineers to check out the efficiency of the machine before installing the machine and design engineers to design machine for higher efficiency than and then the utility will procure their products that will ultimately lead to profit and loss of the company. It indicates the importance of efficiency right from the initial stage as manufacturing units, intermediate stage as planning coordinators, and end-users stage as a utility.

Question

The transistor has the following properties: hte = hFe = B = 100, |VBEl = 0,6V, VT = 26mV and VA = 00. The resistor values are
R81=44k2, R82=22kn, RE=3.9k2, Rc=1.842. Calculate the output impedance of this amplifier circuit.
Vcc
10V
RB1
RE
|VBE|=0.6V
Br=100
C2 Vo
RB2
RC

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1 given

VIEW

Step 2 ac analysis

VIEW

Step 3 output impedance

VIEW

Step by step

Solved in 3 steps with 1 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

Given a D-MOSFET circuit used as an amplifier with the following parameter: IDSS=12mA and a transconductance of gm=3.2 mS. Determine the DC drain to source voltage VDS and the AC output voltage if Vin=500 mV.
Fill in the table VB VC VE Ic LE I8 fre IT gm 5V Consider the circuit given at the right. 600k 1.5k =0.7, Vauo, B=165) 100uF Vo 1k 100uF a) Perform DC analysis and calculate all VB =? VC:? branch currents, node voltages, and small signal parameters 3K VE=? Rout b) Draw a small-signal equivalent model n Vin Rin 400K c) Calculate Ri, Rout, and Ay=Vou/Vin -5V
circuits by using the small signal models of the transistor. Assume the Early voltage of the transistors are infinitely large. Calculate the small-signal input and output impedances of the following Vcc R1 R1 Rout VB RE Rin R2
Open with v Consider class-A emitter follower circuit shown in the figure below. The circuit parameters are V+ = 24 V, V- = -24 V, and RL = 2000. The transistor parameters are B = 50, VBElon) = 0.7 V, and VCElsat) = 0.2 V. The output voltage is to vary between +20 V and -20 V. The minimum current in Q1 is to be ie1 = 20 mA. For vo = 0, find the power dissipated in the first transistor Q1- V+
Using LTSpice, simulate the circuit below, use 2N3904 for the transistor. Part ! DC simulation: Measure VCE and Ic. Use .op for the simulation cmd. Remove all capacitors and input signals first. Part 2 AC simulation: Connect all capacitors now and apply an AC signal at the input with an amplitufe of 1mV and a frequency of 1kHz. Determine the Voltage gain of the circuit by dividing Vo with Vin. Show the output for both the DC and AC analysis. Take a screenshot of the circuit and the output voltages and waveforms. Paste in a word file, write your answers, then save as pdf. 50 kΩ Σ 20 0,5 ΚΩ wwwh 9 Vcc=20 V Ca=1 µF = Cc₂ Cg=50 μF 5.6 kn B=100 Ca IST • 3.3 ΚΩ 5 ΚΩΣ CE
5, a) Determine Vdsat when ID=.5 mA. b) Determine Kn when ID = 0.5 Amps. (Show your work!) c) Determine VTN. (Show your work!) d) Vgs Consider the circuit and corresponding graph, shown below. ID (mA) 0.60 0.50 0.40 0.30 0.20 0.10 0.00 0 0.5 Vds 1 1.5 2 2.5 Vds 3 3.5 4 4.5 5 -Vgs = 1V - Vgs = 1.1V - Vgs = 1.2V - Vgs = 1.3V
a) The n-channel JFET and the D-MOSFET have very similar I-V output characteristics. Which of these two structures can be operated in enhancement mode and why is that possible?
Q.1/ Figure below shows a CE power amplifier in which the collector resistor serves also as the load resistor. Assume Boc-Bac-100. a. Determines the de Q-point (Ico and VCEO). b. Determine the voltage gain and the power gain. c. What changes would be necessary to convert the circuit to a pnp transistor with a positive supply? What advantage would this have? +Vce +15 V R 100 LO K 0.5 W 22 juF RE 8.2 S00 mV pp 330 1 R 36 0 100 uF
6. This problem involves designing a differential amplifier of the following figure. You may assume that the body and source terminal is shorted and you can neglect channel length modulation. Use the following MOSFET parameters: Parameter N-channel P-channel Units +1.10 -1.20 V 5. 2E-5 A/v 1.5E-5 a) Choose IBIAS for an output DC bias level Vo1(Dc) = Voz(DC)=3.00 V. b) Determine the voltage gain of the differential amplifier. c) Determine the magnitude of the small signal common mode gain. VDD = +5V RD1 5kQ RD2 5kO Voi0 o Vo2 M1 M2 W/L=80/2 w/L=80/2 ) IBIAS Vss = -5V
Consider Figure 1 and determine as follows. i. Draw the dc and ac equivalent circuits for the common-source amplifier. ii. Determine Ip, VGs, and VDs for a centred Q-point. Idss=15 mA, and VGS(OFF)= -4 V. iii. Determine the voltage gain, Ay. iv. What happen to the voltage gain, A, if RL is increased to 6.6 kN. VDD +15 V Rp 820 N C3 Vout 1 µF Vin RL 3.3 kN 0.1 μF RG 10 MQ Rs 220 N C2 1 μF
VcC R2 RC- RI RL R1 RE VEE Assume: B=100, VA=150, Vcc=12V, VɛE=GND, R=2K, R1=160K, R2=300K, Rɛ=3K, Rc=2.2K, and R1=100K. A.)For the circuit draw the AC equivalent circuit (including the small signal model for the transistor). Then compute r„, ľo, and gm. Then compute Av (the gain for the entire circuit), and Rin (for the whole circuit). B.)Convert the circuit to a common-collector circuit. Draw the new circuit (assume the same values for the input and load resistances). Then compute the terminal voltage gain, and Rin (for the whole circuit), re-computing any parameters that you need to solve.
A Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.