Q6/Consider n-type silicon at T=300 K doped with arsenic. Determine the maximum doping at which the Boltzmann approximation is still valid. Assume the limit is such that Ed -EF= 3kT
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- How is a solid-state diode tested? Explain.All pn diodes shown below have a voltage drop of 0.3 V when they are "ON". +4V DIA 5k2 D2 VOUT VA 5k2 V8 D1B -2V Indicate in the table whether the diodes D1A, D1B and D2 are ON/OFF with the given VA and VB values. Also give the corresponding VOUT numerical values. DIA (ON/OFF) DiB(ON/OFF) Dz(ON/OFF) VoUT (sign and numerical value) VA |V8 OV +4V OV +3V ov +4VFind the values of ID1 current and VO voltage shown in the circuit below. The voltage drops in the conduction states of the diodes will be taken as 0.7V. (VD1 = VD2 = 0.7V, R1 = R2 = 6kΩ).
- 3: Using silicon diode design a clamper that will produce output V,-20Sin wt+10 (v) when the input voltage is Vo=20Sin wt-10 (V).Draw the circuit diagram and the input and output signals. 4:The 6-V zener diode has a maximum rated power dissipated of 690 mw.Its reveres current must be at least 3mA to keep it in breakdown. Find a suitable value for Rs if V; can vary from 9v to 12v and Ri. can vary from 5000 to 1.2KO.2. Figure A.1 shows I-V characteristics of two diodes, namely A and B. Diode A has higher dynamic resistance than diode B. UTM &UT ID 4 5UTM 3TM UTM UTM &UTM 5 UTM & UTM UTM 3 UTM 03 TM 6 UT 0.68 (a) UTM VD Figure A.1 State one possible reason why the diodes have different knee voltage values. UTM OM & UTM 3 UTM & TM (b) Based on Figure A.1, identify the knee voltage of UTM" TM 5 UTde BE UTMFor the circuit shown in the Figure, if the diodes are silicon diodes with VD(on)=0.7 V, and VIn=50 sin wt V, V1 =7 V and V2 =13 V, then the value of VOUT (p-p) is: R1 D, D2 VIN VOUT vi E v2= Ca. 19.4 V Ob. 17.4 V Cc. 15.4 V Cd. 21.4 V
- 10+ D NAME: The diodes in the circuit below have a saturation current Is = 10-¹4A. The NMOSFET has a threshold voltage of +1V and a K parameter of 10mA/V². > ID = Is (evo/VT - 1) a) Use the exponential diode model b) Oops. Someone built the circuit below, and apparently made a mistake selecting the components. They measure the voltage VA and it is equal to 1.9V. Based on VA = 1.9V, determine the expected value of V₂. +1 -3 V AVD -0.4 3-V 3-2V0 I VA=1.9V 041 VA to calculate VA. 2.2 ΚΩ +10V T 100 Ω NMOSFET VB Ins=4.05mConsidering the following expressions for pure germenium and pure silicon: 1. direct band gap semiconductors 2. indirect band gap semiconductors 3. degenerate semiconductors from these expressions: please choose one: a) 1 alone is true b) 2 alone is true c) 3 alone is true d) none of the aboveFind the value of RI in the circuit shown below, assume Ipz is twice Ipi. The diodes have constant voltage drop of 0.7v for silicone and 0.3v for germanium
- Calculate the currents passing through the diodes D1 and D4 in the circuit given below. (All diodes are silicon).Find the range of Ix to meet thefollowing conditions of the diode D1 and D2(Assume Von = 0.7V for both diodes).Q4) Determine and sketch the output voltage across the load resistor (RL) for the circuit shown below. (assume Si diodes) V_DC 0.75 0.25 V_SIN Y SIN as RL -1 v SOR V_SQR 0.75 -0.75 V_TRI V TRI as