Q3) (i) Calculate the electrical conductivity of a piece of pure Si if it is given the number of intrinsic carriers at 300 K is 1 x 1010 cm3 and that the electron and hole mobilities are He = 1350 cm?.V-1.s1 = 450 cm?.V-1.s1 respectively. and Answer: 0.00000288JUnits(2.cm)1 (ii) Compare the conductivities between Si and Cu at 300 K as calculated from Q2 and Q3(i). Answer: Q4) Following on from Q3, the temperature now increases to 350 K. Describe semi-quantitatively how and why the carrier concentration and the conductivity will change due to this temperature change for both these two materials (Si and Cu). Answer:

Q3) (i) Calculate the electrical conductivity of a piece of pure Si if it is given the number of intrinsic carriers at 300 K is 1 x 1010 cm3 and that the electron and hole mobilities are He = 1350 cm?.V-1.s1 = 450 cm?.V-1.s1 respectively. and Answer: 0.00000288JUnits(2.cm)1 (ii) Compare the conductivities between Si and Cu at 300 K as calculated from Q2 and Q3(i). Answer: Q4) Following on from Q3, the temperature now increases to 350 K. Describe semi-quantitatively how and why the carrier concentration and the conductivity will change due to this temperature change for both these two materials (Si and Cu). Answer:

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 14RQ

See similar textbooks

Similar questions

Each of three insulators forming a string has self-capacitance of "C" farad. The shunt capacitance of each cap of insulator is 0-25 C to earth and 0-15 C to line. Calculate the voltage distribution across each insulator as a pecentage of line voltage to earth and the string efficiency.
6) You work as an engineer in a company and you have been given the assignment of measuring the electrical conductivity and the band gap (Eg) of a new intrinsic semiconductor material at 20 and 100 °C. You cut this material in the form of a rectangular prism with a length of 30 cm, a width of 1 cm and a thickness of 2 cm, and you applied a potential difference of 1 V by placing electrodes on the faces shown in the figure. In this case, you measure a current of 0.8A at 20 °C and 12A at 100 °C. According to this information a) calculate the electrical conductivity of the material at 20 and 100 °C and b) the band gap of this material. 30 ст 2 ст 1 cm
We want to investigate how the field strength will be with air as dielectric and with steatite. A plate capacitor is placed in a 24 kV network between phase and ground. The relative permittivity of air is &=1 and for steatite &-6. The plate capacitor has area = 1m². The distance between the electrodes is 2 mm. Ep = 8.854-10-12 F/m A=1m² d=2mm a) Calculate the maximum field strength in the plate capacitor. (Answer: 9.8kV/mm) b) What is the capacitance of the capacitor if we use steatite? (Answer: C = 26.6nF)
7. Each of three insulators forming a string has self-capacitance of "C farad. The shunt capacitance of each cap of msulator is 0 25 C to earth and 0-15 C to line. Calculate the voltage distribution across each insulator as a pecentage of line voltage to earth and the string efficiency.
You work as an engineer in a company and you have been given the assignment of measuring the electrical conductivity and the band gap (Eg) of a new intrinsic semiconductor material at 20 and 100 °C. You cut this material in the form of a rectangular prism with a length of 30 cm, a width of 1 cm and a thickness of 2 cm, and you applied a potential difference of 1 V by placing electrodes on the faces shown in the figure. In this case, you measure a current of 0.8A at 20 °C and 12A at 100 °C. According to this information calculate the electrical conductivity of the material at 20 and 100 °C and 30 ст 2 cm 1 ст
(1-7) Find the concentration of holes and electrons in a p-type Germanium at 300 k, if the conductivity is 100 per ohm per cm. Also find these values of N- type Silicon, if the conductivity of 0.1 per ohm per cm .given for Germanium n-2.5×1013/cm³ Hn=3800 cm2/v-s, up=1800 cm?/v-s, and for Silicon n=1.5x101%cm', Hn=1300 cm²/v-s, µp=500 cm²/v-s
A piece of silver wire has a resistance of 1 ohm. Determine the resistance of alead wire one-third the length and one-third the diameter if the resistivity of lead wire is 30 times that of silver. NOTE: Please explain where did you get the variables so I can understand them. Thank you
Briefly explain the differences between conductors, insulators, and semiconductors in terms of energy bands, give examples, and then draw the energy band diagrams.
Using the idea of energy bands in solid materials, explain the characteristics of the followingmaterialsa) conductorsb) insulatorsc) semiconductors
I. SOLVE THE FOLLONING PROBLENS : A COPPER WIRE OF 0,3 Mm RAAUS HAS A LEN ETH OF 1. JOM- IF THE RESISTIVITY of cOpPER IS 1-7 x0 WHAT WOULD BE THE RESISTANOE OF THE WIRE? OF A 100m WIRE IS 1035 mm AND 3.7 OHMS. WHAT 2. THE DIAMETER THE REISTANCE IS IS THE CONDUCTIVITY 3. WHAT WILL BE THE VALUE OF A CAPACITOR WHEN IT HAS A CAPACITIVE REACTANCE OF 300R ANP to A 6o HZ. SUPPLY? IN FARADS IS CONNECTED 4. WHAT Is THE VALUE OF THE RESISTOR WITH THE FOLLOWING COLORS ? A. BROWN, BLACK, GOLD, REP B. BLUE YELON BROWN, SILVER PED, SILVER, BROWN, VIOET C. 5. AND t WHEN V 220V AND R= 50n WHEN I = 45 A WHEN V = 120V FIND V ANO R 80n AND AND E= 11A-
A wire has a circular cross-section of radius r= 3.53 mm. The conductivity of the wire is 1x10^5 (Ohm, meter) and its lengthis 2m. The total resistance of the wire in Ohms is:O a. 0.51O b. 0.72ç. 0.26O d. 5136.07O e. 797497.60
At what temperature will intrinsic silicon become an insulator, based on the deﬁnitions in Table ? Assume that μn = 1800 cm2/V·s and μp = 700 cm2/V·s.