k=143 comes fro

Principles of Heat Transfer (Activate Learning with these NEW titles from Engineering!)
8th Edition
ISBN:9781305387102
Author:Kreith, Frank; Manglik, Raj M.
Publisher:Kreith, Frank; Manglik, Raj M.
Chapter1: Basic Modes Of Heat Transfer
Section: Chapter Questions
Problem 1.4P: 1.4 To measure thermal conductivity, two similar 1-cm-thick specimens are placed in the apparatus...
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Where does the value for k=143 comes from? Where do they get that the area is im^2? Not explained in the problem statement. 

Chapter 1, Problem 57P
The maximum allowable heat flux on the bottom surface of the silicon
wafer is 298kW/m² .
Explanation of Solution
Given information:
The thickness of the silicon wafer is 0.0005m.
The thermal conductivity of silicon wafer at 27°C is 149W/mK.
Temperature difference between inner and outer surface of silicon wafer
is 1°C , respectively.
Calculations:
Rate of heat transfer (Q) = KAAT
L.
(AT) = Temperature difference (T1-T2) = 1°C
(A) = Surface area of silicon wafer=lm?
Where,
(L) = Thickness of the silicon wafer=0.0005m
(k) = Thermal conductivity of the silicon wafer=149W/mK
> Q = KATA
Putting the values in the equation, we get,
L.
> Q = 149xlxl
0.0005
Q=298000W=298kW
Heat flux on the bottom surface of the silicon wafer is,
298000W _298kW/m
Transcribed Image Text:Chapter 1, Problem 57P The maximum allowable heat flux on the bottom surface of the silicon wafer is 298kW/m² . Explanation of Solution Given information: The thickness of the silicon wafer is 0.0005m. The thermal conductivity of silicon wafer at 27°C is 149W/mK. Temperature difference between inner and outer surface of silicon wafer is 1°C , respectively. Calculations: Rate of heat transfer (Q) = KAAT L. (AT) = Temperature difference (T1-T2) = 1°C (A) = Surface area of silicon wafer=lm? Where, (L) = Thickness of the silicon wafer=0.0005m (k) = Thermal conductivity of the silicon wafer=149W/mK > Q = KATA Putting the values in the equation, we get, L. > Q = 149xlxl 0.0005 Q=298000W=298kW Heat flux on the bottom surface of the silicon wafer is, 298000W _298kW/m
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