JVDDRD- VoutYou may have already noticed that the common source amplifier circuit isbasically the same as the NMOS RTL inverter, just used for differentpurposes. The slope of the inverter VTC (Vout-Vin curve) is also the small-signal voltage gain of the common source amplifier. Assume VDD = 5V and Vin M₁Vthn 0.7 V for the NMOS, use PSPICE to simulate the VTC (sweep from0 to 5 V) of the common source amplifier for the following conditions:(a) Fix RD = 100 kN, L = 1 µm, W = 1 μm. Vary kn² = 20, 100, and 500 μА/V².(b) Fix kn' = 100 µA/V², R₁ = 100 kQ, L = 1 μm. Vary W = 1, 5, and 50 μm.(c) Fix kn'=1100 μA/V², L = 1 µm, W= 1 µm. Vary RD = 10 k2, 100 kQ, 1 MQ.Compare the slopes of the VTCs (which correspond to the voltage gains of the amplifiers) youobtained from the various conditions in a-c and explain your results.

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Answered: J VDD RD - Vout You may have already…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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A single phase half bridge inverter is operating from a 25 V DC source and supplies power to resistive load. What is the distortion factor of fundamental output voltage?
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A single phase half a bridge bipolar PWM inverter is operated from a center top 240 volts DC supply. The fundamental output frequency is adjusted to 50 Hz, the carrier frequency used is 1.2 kHz, modulation index is adjusted to 0.8. Determine: i) Carrier ratio (Mf) and the number of pulses per cycle. ii) fundamental output voltage. iii) distortion and harmonic factor of the output voltage waveform. vi) Draw the waveforms created O a. 24 O b. 16 O c. 20 O d. 12
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Electrical Engineering HGJGJGJGJGJJGJGJG 2. A single-phase half-bridge inverter is connected to a 600V d.c. source. A series connected R-L load has R = 60 ohm, L = 70mH. The inverter frequency is 60Hz. Determine the values of the rms load current, the load power and the total harmonic distortion factor, up to the 11th harmonic. 41 a₁0₁ D₂ ia₁ 12 h R₁ 44 Q₂ in V₁ la D₂ D₁ **PLS SOLVE QUESTION CORRECTLY, THANK YOU. L₁ www
For a 1-phase full-bridge inverter fed from 48 V dc and connected to load resistance of 2.4 Q, the rms value of fundamental component of output voltage is
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The NMOS and PMOS transistors have the following characteristics. The channel length is 350 nanometers. For NMOS: tox=50nm, Vtn-0.25V, un-560cm²/vsec, W=700nm, L=350nm For PMOS: tox-50nm, Vtp=-0.35V, up-240cm²/vsec, W=700nm, L=350nm a) Compute the NMOS gate capacitance CG in Femto Farads. b) Compute the resistance Rp for PMOS if the power supply voltage (Vdd) is 3.3 volts and the threshold voltage is 0.35 volts. Use the multiplying adjustment factor as 2.5.
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1) with the aid of a diagram briefly describe the process of photolithography used in the fabrication of monolithics ICs 2) Explain the significance of the buried layer in npn transistor fabrication. 3) Draw the lateral view of the layout of a lateral pnp transistor. Label all the diffusion regions. 4) state five differences between series regulators and switching regulators.

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