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- A conductive wire has a conductivity of ( 0.649 × 10^-8) at room temperature are ( 5.8 x 1028) conduction electron/m.calculate the mobility,resistivity and relaxation time of electronsSince the Fermi energy level of zinc is EF = 9.47 eV, what is the number of electrons per unit energy per unit volume at this energy level? Since the resistivity of zinc is 5.90 x 10^-8 ohm.m, calculate the average time interval between collisions of electrons.Given the fermi energy and electron concentration 7.00 eV and 8.0x1026 e /m' respectively of a Copper of resistivity 1.7x10 N.m, calculate the mean free path. 8- (a) 3780 nm (b) 5000 nm (c) 4100 nm (d) 7000 nm
- The diffusion constant for injected electrons in a molecular crystal is 1x10^-2 cm^2/s at room temp. What is the mobility? What is the drift velocity in n electric field of 1x10^5 Volts/cm?Hall coefficient of a specimen of depend silicon found to be 3.66×10m³/C. The resistivity of the specimen is 8.93×10-32 m. Find the density of the charge carriers (in electrons/m³) and the mobility in (m/V.s). 1.7e22, 0.04 O 1.8e22, 0.04 O 1.7e22, 0.05 O 1.8e22, 0.05 OThe mean speed of conduction electron in Cu is electrons1.5 × 106 ms-1 and the frequency of vibration of the copper atoms at room temperature is about 4 × 1012 s-1. Estimate the drift mobility of electrons and the conductivity of Cu. The density of Cu is 8.96 g cm-3 and the atomic mass is 63.56 g mol-1.
- Copper, a monovalent metal, has molar mass 63.54 g/mol and density 8.96 g/cm3. What is the number density n of conduction electrons in copper?Given the fermi energy and electron concentration 7.00 eV and 8.0×10²6 e¯/m³ respectively of a Copper of resistivity 1.7×108 2-m, calculate the mean free path. (a) 3780 nm (b) 5000 nm (c) 4100 nm (d) 7000 nmA 37.5 ko resistor is made of two strips connected in parallel, each one has 6 mm long, one strip is of intrinsic germanium and has 0.5 mm wide and 40 um thickness. Determine the width of the other strip in mm if its thickness is 10 µm and is made of Ge doped with 15.625x10" donor atom/m', at the working temperature. The intrinsic carrier density of Ge is 3.125×10" m, and the electron and hole mobilities are 0.4 m/v.sec. and 0.2 m/v.sec., respectively
- An n-type defect in a semiconductor acts like a hydrogenic atom, with the exception that the dielectric constant of the vacuum is replaced by the dielectric constant for Si. If the dielectric constant for Si is 11.7 times larger than for the vacuum. The ionization energy for an electron in an n-type defect is approximately: А. 3.4 ev В. 0.1 ev С. 13.6 ev D. 1.2 ev: A conductive wire has a resistivity of (0.649x10-8(2.m)) at room temperature are (5.8x10- ) conduction electron/ms.Calculate the mobility, resistivity and relaxation time of electrons. Ql:An n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.