Elaborate following with Scientific Reason: Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measurement should be taken to remove the depletion zone?
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Elaborate following with Scientific Reason:
Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measurement should be taken to remove the depletion zone?
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- What is scientific Reason? c. Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measurement should be taken to remove the depletion zone?Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measures should be taken to remove the depletion zone?Explain how a pn junction works. Specifically, what happens when you bring together a block of p-type material and a block of n-type material? Why is a depletion region formed? Why do we have an electric field with no applied voltage? Why is there a built-in voltage with no applied voltage? Explain the I-V curve of a pn junction.
- Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSEExplain why Depletion Zone inside P-N Junction is a problematic area? What necessary measures should be taken to remove the depletion zone?Derive the equation for doping profile of a one sided junction using depletion approximation. The full question is attached as an image below
- As shown is a positive parallel clipper circuit which has an input voltage of E=t5V. The negative output voltage is to be -4.5V when lo is 5mA. Assume ideal diode model approximation. Determine the value of R1 in ohms. Note: Write only the numeric value of the answer, round to 4 decimal places. No need to include the unit. R, +E ww Output Input D, -E -(E-1,R,)Explain unbiased p-n junction by drawing figures.consider the figure below that shows an approximated reverse recovery turn-off characteristics for a power diode. Show that the following relation can express the total reverse recovery charge, Qrr = 1/2(trr*ts1) di1/dt =1/2(trr*ts21) di2/dt * ip Isl 1s2! -Ir
- In your own words and with the aid of suitable diagrams, describe the following: Explain what the barrier potential is and how it is developed in pn junction diode. What is the typical value of the barrier potential for a silicon diode?Suppose we have a 10-V-peak sinusoidal voltage source. Draw the diagram of a circuit that clips off the part of the sinusoid above 5 V and below -4 V. The circuit should be composed of ideal diodes, dc voltage sources, and other components as needed. Be sure to label the terminals across which the clipped output waveform vo(t) appears.a) What is n-type semiconductor materials? What are the majority and the minority cariers? b) What is p-type semiconductor materials? What are the majority and the minority cariers? c) What is depletion region of a p-n junction diode? d) Describe in your own words the forward-bias and reverse- bias conditions of a p-n junction diode. e) Draw a Diode Symbol and label the anode and the cathode. Si Ge 2 ka f) Find V, in the circuit shown in +20 V 2 k2 15V Fig. Fuad Al-Mannai EENG261 Page 1