I need answer within 8 minutes please please with my best wishes Consider a silicon pn junction at T= 300 K with acceptor doping concentrations of 10 cm- anddonor doping concentrations of 1015 cm-3.Calculate the width of the space charge region in the pn junction when a reverse biased voltageof 5 V is applied.Note/n; = 1.5 x 1010 cm-3Es = 1.035 x 10-12F/cm

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Consider a silicon pn junction at T 300K with acceptor doping concentrations of 10t cm- and donor doping concentrations of 1015cm. Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/n; = 1.5 x 1010 cm-3 E, = 1.035 x 1012F/cm

Consider a silicon pn junction at T 300K with acceptor doping concentrations of 10t cm- and donor doping concentrations of 1015cm. Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/n; = 1.5 x 1010 cm-3 E, = 1.035 x 1012F/cm

Glencoe Physics: Principles and Problems, Student Edition

1st Edition

ISBN:9780078807213

Author:Paul W. Zitzewitz

Publisher:Paul W. Zitzewitz

Chapter29: Solid-state Electronics

Section29.1: Conduction In Solids

Problem 17PP

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I need answer within 8 minutes please please with my best wishes

Consider a silicon pn junction at T= 300 K with acceptor doping concentrations of 10 cm- and
donor doping concentrations of 1015 cm-3.
Calculate the width of the space charge region in the pn junction when a reverse biased voltage
of 5 V is applied.
Note/n; = 1.5 x 1010 cm-3
Es = 1.035 x 10-12F/cm

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