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- the dependency between elecron density and fermi energy for 2-Dfree electron gas is8. Each of the three insulators forming a string has a self capacitance of C farad The shunt capacitance of each insulator is 02C to earth and 0-1 C to line. A guard-ring increases the capacitance of line of the metal work of the lowest insulator to 0-3 C. Calculate the string efficiency of the arrangement: )with the guard ring. (7) without guard ring. 10 95% () 86 13%|The given figure shows a step-down dc chopper. A freewheeling diode is placed across the load. The TON would be TOFF load current varies between the limits of 10 A. The time ratio 100V KH 40 mH vvvvv io 5Q
- The voltage signal coming out of the capacitor is with small ripples compare to the voltage signal out of the diode. True FalseSilicon is doped with a boron concentration of 4×1018/cm3. Is boron a donor or acceptor impurity? Find the electron and hole concentrations at 300 K. Is this material n-type or p-type? Find the electron and hole mobilities. What is the resistivity of the material?7. Each of three insulators forming a string has self-capacitance of “C" farad. The shunt capacitance of each o h cap of insulator is 0-25 C to earth and 0-15 C to line. Calculate the voltage distribution across each insulator as a pecentage of line voltage to earth and the string efficiency. [ 31-7%, 29-4%, 38-9%; 85-7%]
- uO 9:.0 A docs.google.com * ZAIN IQ l. Q3/B: Assume an ideal diode model for all the diodes in the circuit below. calculate voltages and currents through D1 and D2 9kQ 1N1199C R2 D1 18KQ 1N1199C D3 1N1199C V2 =12 V R3 1kQ R4 5kQ 1.22 V 11 mA 0.5 A O VD1 ID1 VD2 ID2 صفحة 4 من 6The current through the diode in the circuit given in the Figure below when Vy = 0.7 V is? ww 8092 12V Select one a. 24.26 mA b. 13.09 mA c. 58.23 mA d. 40.13 mA 40-52 ww 3092 IDExplain the exponential relationship between the charge on capacitor and time during charging or discharign with the use of natural log
- A simple p*n junction is designed to work as IMPATT diode. The doping concentrations in the p* layer is 1019 cm-3 while the doping in the n-layer is 0.7 x1016 Calculate the peak electric field if the breakdown voltage is 80 V and the dielectric constant is 11.9. Express your answer in the unit of kV/cm. cm-3High density 6w density to low density low bavyier VoltaJe Higharier, Voltad to high low doPed density atoms Diffusion Curment from Conductivity of Semi conductor In crease with FoYward biased P-N junctionYEN A docs google.com/presentalionvu/109aRdVPOGDKPIlowJ800-G gwlgdTPyTSE OLaSFDGy/edit A Classes Aplitude Questiors. O www.tce.edu I IVIVA a AMAZON E FUPKART SkiRack.com How to pass a 2D a. G operi ended behavi. E Rectifying Diodes. * NASSCOM FutureS.. I VIRTUAL ELECTRON. 白 Q1 For the op-amp circuit shown below V is approximately equal to 10 V 105 0 95 2 1 ΜΩ 100 kN 上 100 k2 95 2 105 N 1 M2