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Carrier Statistics Example 3.4 In a silicon sample at equilibrium the Fermi level is located above the middle of the band gap by 0.38eV. The phosphorus donor states are located 0.04 eV below the conduction band. Determine the percentage ionization of the phosphorus atoms at T = 300 K. Answer: 100%

Carrier Statistics Example 3.4 In a silicon sample at equilibrium the Fermi level is located above the middle of the band gap by 0.38eV. The phosphorus donor states are located 0.04 eV below the conduction band. Determine the percentage ionization of the phosphorus atoms at T = 300 K. Answer: 100%

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N N un Untitled document ✩ ✪ File Edit View Insert Format Tools Extensions Help Arial SUMMARY OUTLINE 100% Headings that you add to the document will appear here. Normal text + 11 + BIUA 3 Carrier Statistics Example 3.4 GO 9 10 11 IE 12 13 1:14 15 In a silicon sample at equilibrium the Fermi level is located above the middle of the band gap by 0.38eV. The phosphorus donor states are located 0.04 eV below the conduction band. Determine the percentage ionization of the phosphorus atoms at T = 300 K. Answer: ~ 100% a Share 17 18 (5 + + ď +
Transcribed Image Text:N N un Untitled document ✩ ✪ File Edit View Insert Format Tools Extensions Help Arial SUMMARY OUTLINE 100% Headings that you add to the document will appear here. Normal text + 11 + BIUA 3 Carrier Statistics Example 3.4 GO 9 10 11 IE 12 13 1:14 15 In a silicon sample at equilibrium the Fermi level is located above the middle of the band gap by 0.38eV. The phosphorus donor states are located 0.04 eV below the conduction band. Determine the percentage ionization of the phosphorus atoms at T = 300 K. Answer: ~ 100% a Share 17 18 (5 + + ď +
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