c. [Pl-1.b] Calculate the probability of having an electron occupying an energy state that is 0.7 eV above the electrochemical potential at 300 °K.
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- P1.15. A copper wire has a diameter of 2.05 mm and carries a current of 15 A due solely to clectrons. (These values are common in residential wiring.) Each electron has a charge of -1.60 × 10-19 C. Assume that the free-electron (these are the electrons capable of moving through the copper) concentration in copper is 1029 electrons/m'. Find the average velocity of the electrons in the wire.12. If the conductivity of the pure Germanium change with temperature according the fol- lowing relation, so what is the energy gap of the Germanium? -4350 exp TIdentify the statement from the following when the inductance can have high value. a. All the given options O b. If the number of turns of the wire is more O c. If the length of the wire is longer O d. If the cross-sectional area is less
- (1-7) Find the concentration of holes and electrons in a p-type Germanium at 300 k, if the conductivity is 100 per ohm per cm. Also find these values of N- type Silicon, if the conductivity of 0.1 per ohm per cm .given for Germanium n-2.5×1013/cm³ Hn=3800 cm2/v-s, up=1800 cm?/v-s, and for Silicon n=1.5x101%cm', Hn=1300 cm²/v-s, µp=500 cm²/v-s1. A Germanium sample is 5 mm long and has a rectangular cross-section, 50 μm by 150 μm. A Phosphorus atom with concentration of 4.4 x 10¹5/cm³ at 300 K is added and corresponds to one impurity atom for 107 Ge atoms. A steady current of 3 juA exists in the bar. a. Set up the equations for concentrations, conductivity, resistance, and voltage. b. Solve for the electron and hole concentration, conductivity, resistance, and voltage. 2. A basic junction diode is operating at a room temperature of 25°C and has a reverse current of 1 nA. a. Set up the different diode equations. b. Solve for the diode current at room temperature, reverse current, and threshold voltage when the temperature becomes 72°C.Q1] Electrons in silicon have a mobility of 1000 cm /V-sec. The electric field is applied to make the electrons reach a velocity of 3 x 10' cm/sec. Assume that the mobility is constant and independent of the electric field. What voltage is required to obtain this field in a 5 um thick region? How much time do the electrons need to cross the 5 um thick region?
- Q2) A silicon crystal having a cross-sectional area of 0.001cm2 and a length of 10 cm is connected at it s ends with 10v battery at temperature 300°K, when the current is 100mA. Find the resistivity and the conductivity?1. A Germanium sample is 5 mm long and has a rectangular cross-section, 50 µm by 150 μm. A Phosphorus atom with concentration of 4.4 x 10¹5/cm³ at 300 K is added and corresponds to one impurity atom for 107 Ge atoms. A steady current of 3 µA exists in the bar. a. Set up the equations for concentrations, conductivity, resistance, and voltage. b. Solve for the electron and hole concentration, conductivity, resistance, and voltage. 2. A basic junction diode is operating at a room temperature of 25°C and has a reverse current of 1 nA. ( a. Set up the different diode equations. b. Solve for the diode current at room temperature, reverse current, and threshold voltage when the temperature becomes 72°Clell L1 R Ro 2. In this figure, assume arbitrary numbers for R1, R2, L1, and L2 including some number for the battery E. Find the rate of current in which inductor one (L1) is changing just after the switch is closed. Next, find the current in L1 after some time after the switch has been closed. lell
- A copper wire has a diameter of 2.05 mm and carries a current of 15 A due solely toelectrons. (These values are common in residential wiring.) Each electron has a charge of -1.60 x 10-19 C. Assume that the free-electron (these are the electrons capable of movingthrough the copper) concentration in copper is 1029 electrons/m³. Find the average velocity ofthe electrons in the wire.7. A diode conducts 1mA at 20°C. If it is operated at 100°C, what will be the current? Given data: n=1.74 and NTC value = 2.2mV/°C.At what temperature will intrinsic silicon become an insulator, based on the definitions in Table ? Assume that μn = 1800 cm2/V·s and μp = 700 cm2/V·s.