BE +10V R1 20k Q1 Ve R2 15k RE 1k

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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For the circuit below B = 100, VBE = 0.7 V. Find Icq and VCEQ-
+10V
R1
20k
Q1
R2
15k
RE
1k
Transcribed Image Text:For the circuit below B = 100, VBE = 0.7 V. Find Icq and VCEQ- +10V R1 20k Q1 R2 15k RE 1k
Semiconductor Constants
Eg (eV)
1.1
B (cm³ K³2)
В (сm
Material
-3
Silicon (Si)
Gallium Arsenide (GaAs)
Germanium (Ge)
5.23 х 1015
2.10 x 1014
1.4
0.66
1.66 x 1015
Boltzmann's constant – 86 x 10-6 eV/K
Thermal Voltage at room temperature (300 K) – VT = 0.026 V
Transcribed Image Text:Semiconductor Constants Eg (eV) 1.1 B (cm³ K³2) В (сm Material -3 Silicon (Si) Gallium Arsenide (GaAs) Germanium (Ge) 5.23 х 1015 2.10 x 1014 1.4 0.66 1.66 x 1015 Boltzmann's constant – 86 x 10-6 eV/K Thermal Voltage at room temperature (300 K) – VT = 0.026 V
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