An N-type wafer with a bulk concentration of 4.5 X 1015/cm3 was diffused with Boron with a surface concentration of 5 X 1018/cm3, and resulted to a junction depth of 4μm. a.) How long(in hours) did the diffusion take if the diffusion temperature was 1373°K?   D0= 10.5 cm2/s   EA= 3.69 eV b.) The Boron diffusion process of (A) is followed by a drive-in process for 18 hours at 1350°C. Find the junction depth (in μm), after the drive-process. Round-off up to 4 decimal places for the entire solution till the final answer.

Delmar's Standard Textbook Of Electricity
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ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Stephen L. Herman
Chapter1: Atomic Structure
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An N-type wafer with a bulk concentration of 4.5 X 1015/cm3 was diffused with Boron with a surface concentration of 5 X 1018/cm3, and resulted to a junction depth of 4μm.

a.) How long(in hours) did the diffusion take if the diffusion temperature was 1373°K?

  D0= 10.5 cm2/s

  EA= 3.69 eV

b.) The Boron diffusion process of (A) is followed by a drive-in process for 18 hours at 1350°C. Find the junction depth (in μm), after the drive-process.

Round-off up to 4 decimal places for the entire solution till the final answer.

 

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