A silicon crystal having a cross-sectional area of 0.002 cm² and a length of 0.01 cm is connected across a 20-V battery. At T = 300 K, a current of 0.25 A in the semiconductor is required. Calculate the required conductivity and use that to determine the density of donor atoms to be added to achieve this conductivity. Nd= 2.31 X 10¹4 cm-3 Nd= 3.09 X 1014 cm-3 Nd=2.89 X 1014 cm-3 Nd=4.63 X 1014 cm-3

A silicon crystal having a cross-sectional area of 0.002 cm² and a length of 0.01 cm is connected across a 20-V battery. At T = 300 K, a current of 0.25 A in the semiconductor is required. Calculate the required conductivity and use that to determine the density of donor atoms to be added to achieve this conductivity. Nd= 2.31 X 10¹4 cm-3 Nd= 3.09 X 1014 cm-3 Nd=2.89 X 1014 cm-3 Nd=4.63 X 1014 cm-3

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

A silicon diode is at T = 300 K in which IS = 10–14 A and n = 1. Find the diode current for vd = 0.7 V.
A silicon diode has an incremental resistance “R”. It is then connected in series with a resistor 25 ohms across a 25V source. If the voltage drop across the 25 ohm resistor is 10 V, what is the value of “R” ?
For the circuit below with E = 10 V, R = 5800 N. Find the following: a) current in the circuit b) voltage across the diode c) voltage across the resistor Anode (A) Cathode (K) b E R wwww
2. Draw the graph of the voltage across the 10K resistor (calculate the values for the different voltages across the 10K resistor) of the circuit in the figure, knowing that the voltage source V is sinusoidal. And the diodes are silicon
Using drawing and Explanation. Effect of light: What will happen if you shine a light on three parts of the p-n junction. Show the effect of light separately on p-si, n-si, and depletion regions. ww.
A silicon solar cell has a short circuit current of 90 mA and an open-circuit voltage of 0.75v under solar illumination. The fill factor is 0.8. What is maximum power delivered to a load by this cell?
Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?
Consider the given circuit and a waveform for the input voltage. The diode in circuit has cutin voltage V, = 0. %3D R 10- D1 6 V 8 V D2 -10 is The waveform of output voltage v.
The anode of a diode is connected to one terminal of a 1-KΩ resistor. The other terminal of the resistor is connected to the ground and the negative terminal of a 12-volt DC source is also grounded. The three components are connected in series. How much is the load current with the ideal diode?
A clipper circuit based on diodes are simple way to modify waveform in mechatronics. Assume that the two diodes shown in the circuit below are ideal diodes. If the input voltage in the circuit is a 1 kHz sinusoid with peak amplitude of 8V, sketch the Vaue (t). 10 k. 8V 10 kN. D2 RL Vourlt) Vin= Vin(t) Ims D1 6V -8V 4V Page | 1
A silicon diode is in parallel with a germanium diode and is connected to a load resistor having a value of 20 k2 and a forward supply voltage of 10 V. What is the approximate voltage across the silicon diode? * 0.7 V 0.3 V 10 V O 1.0 V
Need to find I and Vx. I know the answers are I=0.9mA and Vx=0V, both diodes are on. I am struggling with KCL and KVL on this, could you please give a detailed explanation. Thank you!