A narrow beam containing 1020 photons at 6 MeV impinges perpendicularly on a layer of lead 12 mm thick, having a density 11.3 g/cm. How many interactions of each type (Photoelectric, Compton, Pair, Rayleigh) occur in the lead ? ANS = Photoelectric: 1.00 x 1018 ; Compton: 1.793 x 1019; pair: 2.556 x 1019 Ravleigha 6 x 1016

A narrow beam containing 1020 photons at 6 MeV impinges perpendicularly on a layer of lead 12 mm thick, having a density 11.3 g/cm. How many interactions of each type (Photoelectric, Compton, Pair, Rayleigh) occur in the lead ? ANS = Photoelectric: 1.00 x 1018 ; Compton: 1.793 x 1019; pair: 2.556 x 1019 Ravleigha 6 x 1016

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Calculate the typical photon energy and momentum for Si and compare it with the typical phonon energy and momentum. (Eg = 1.11 eV, h = 6.62 x 10-34 J.s, lattice constant λphonon = a0 = 5.65 x 10-10 m, vs = 5 x 103 m/s) Comment on your results. What is the role of phonons in transitions from VB to CB in an indirect gap semiconductor?
For a given type of semiconductor material with the band gap energy of 1.5eV, find the maximum wavelength that a photon can have to excite an electron free.
Consider a slap of silicon which is illuminated with photons having a wavelength of 0.8 µm. The absorbtion coefficient at this wavelength is 103 cm1. Calculate the thickness of the semiconductor that will absorb 80% of the incident photon energy. Lütfen birini seçin: O 0.00016 cm O 1.6 cm 0.0016 cm O 0.016 cm O 0.16 cm
What will be the change in the electron density of electrons of the E layer, when the critical frequency changes from to 4 MHz to 1 MHz between day and night?
If there is an energy gap of 5eV between conduction band and the valence band in a material, such materials behave as semiconductors conductors insulators non-conductors
Example Light wave with A, = 5nm passes into fiber cable with n, = 2.4. Find the wave's speed and wavelength in the fiber. %3D ans: v = 1.25x10% m/s 1 = 2.08 nm
QUESTION 4 The energy gap of GaP is 2.26 eV. Show that partial absorption of visible light is a) occurred when GaP wafer exposed to visible light, and the materials appears reddish. For visible light, the photon energy is in the range of 1.8 – 3.1 eV. In some semiconductor material the bottom of conduction band does not lie at the b) origin (k + 0). For the absorption process, the electrons absorb the photon and phonon simultaneously to make a transition from valence band to conduction band. Given the wavelength of photon is 2- 10°m and for optical phonon the wavelength is 2~10-9m, respectively. Using the calculated values of energy and momentum of phonon and photon, explain the main roles of photon and phonon for the transition proses. (Given phonon velocity, Vph = 3000 ms-', speed of light, c = 3 x 108 ms1 and Plank constant, h= 4.1357 x 10-15 eVs)
Which of the following statements is not true about the linear polarization technique? a) Measurements begin at-20 mV from OCP and end around +100 mV from OCP b) The slope of the plot is AE/AC is given in volts/amperes or mV/mA c) This technique can be used to determine very low rate of corrosion d) It can be used to monitor corrosion rate in process plant
The HVL of a photon beam with 0.693 1/mm linear attenuation coefficient
2. A semiconductor material has a band gap of 2.0 eV. Determine the wavelength range of light that can pass through the material and the wavelength range of light that is absorbed by the material.
The transmissivity of transparent material 15 mm thick to normally incident light is 0.80. If the refraction index of this material is 1.5, find the thickness of it that will yield a .transmissivity of 0.70
Q. Indium phosphate is a direct gap II-V semiconductor with a band gap of 1.35 eV at room temperature. The absorption coefficient at 775 nm is 3.5 x 106 m-1. A platelet sample 1 um thick is made with antireflection coated surfaces. Estimate the transmission of the sample at 620 nm. Hint: The sample is antireflection coated, and so you may take reflectance as zero (R=0).