Answer All Questions Question 5Oxide thickness (μm)(a)101.0-0.1(1.0))02.1<100>Silicon12) *Cwet1100 Cwel1000 C wet900 'Cwet101200 °C dry(b) Describe the LOCOS and STI process flow.1100 °C dry1000 °C dry900 °C JryOxidation time (hr)Figure 1: Oxide thickness vs oxidation timeThermal grown oxide is mainly used as isolation material in semiconductor fabrication. For theisolation of neighbouring MOS transistors there exist two techniques, namely Local Oxidationof Silicon (LOCOS) and Shallow Trench Isolation (STI).Name the five (5) application of thermal oxidation process.100(c) Discuss the two (2) advantages and disadvantages of LOCOS and STI process.

It is asked to state five applications of thermal oxidation process. Also we need to describe LOCOS…

Answered: (a) Name the five (5) application of…

(a) Name the five (5) application of thermal oxidation process. (b) Describe the LOCOS and STI process flow. (c) Discuss the two (2) advantages and disadvantages of LOCOS and STI process.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Step 1: Given information about LOCOS and STI process.

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Step 2: Explanation about five applications of thermal oxidation.

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Step 3: Describing the process flow of LOCOS.

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Step 4: Describing the process flow of STI.

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Step 5: Discussing the advantages and disadvantages of LOCOS process.

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