5a) Calculate the intrinsic carrier concentration for GaAs at 40°C. (For GaAs, the band gap is 1.42eV,the effective density of states in the conduction band is 4x10¹7cm-³, and the effective density of statesin the valence band is 9x1018 cm-³.) Be sure to include units.5b) Assume that GaAs is doped with N₂=10¹7cm-³ donor atoms. What is the location of theFermi Level at 40°C, relative to the intrinsic Fermi level? Be sure to include units.

a By formula of interinsic carrier concentration ni = Nc×Nv×e-Eg2KTHere , K = 1.38×'10-23…

5a) Calculate the intrinsic carrier concentration for GaAs at 40°C. (For GaAs, the band gap is 1.42eV, the effective density of states in the conduction band is 4x10¹7cm³, and the effective density of states in the valence band is 9x10¹8 cm-³.) Be sure to include units. 5b) Assume that GaAs is doped with No=10¹7cm ³ donor atoms. What is the location of the Fermi Level at 40°C, relative to the intrinsic Fermi level? Be sure to include units.

5a) Calculate the intrinsic carrier concentration for GaAs at 40°C. (For GaAs, the band gap is 1.42eV, the effective density of states in the conduction band is 4x10¹7cm³, and the effective density of states in the valence band is 9x10¹8 cm-³.) Be sure to include units. 5b) Assume that GaAs is doped with No=10¹7cm ³ donor atoms. What is the location of the Fermi Level at 40°C, relative to the intrinsic Fermi level? Be sure to include units.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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