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5 10 15 20 25 VCE (V) se the above transistor characteristic and given ß = 125 for the following circuit a. Draw the load line 30 b. Determine the Q point for the circuit c. Find IBQ, ICQ, VCEQ 20 V ' 270 ΚΩ

5 10 15 20 25 VCE (V) se the above transistor characteristic and given ß = 125 for the following circuit a. Draw the load line 30 b. Determine the Q point for the circuit c. Find IBQ, ICQ, VCEQ 20 V ' 270 ΚΩ

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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(H5-02) BJT Configurations, BJT DC Biasing, Load Line Analysis To Find The Q Point. (Course: Electronic Devices and Circuit Theory).

-Use Equation Operators or write it down on paper/digital paper.

-Redraw and Apply.

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-Please answer without abbreviation.

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10 7 5 2 Ic(mA) 5 -110 μ. 10 100 μ 190 με 15 .80 μ.Α. - 70 με 60 μA 50 μA 20 40 μA 30 μA VCE (V) Use the above transistor characteristic and given ß = 125 for the following circuit a. Draw the load line b. Determine the Q point for the circuit c. Find IBQ, ICQ, VCEQ 20 μA 25 10 μA 1=00 30 20 V • 270 ΚΩ IBQ 470 92 Ico VCEQ 2.2 kQ2
Transcribed Image Text:10 7 5 2 Ic(mA) 5 -110 μ. 10 100 μ 190 με 15 .80 μ.Α. - 70 με 60 μA 50 μA 20 40 μA 30 μA VCE (V) Use the above transistor characteristic and given ß = 125 for the following circuit a. Draw the load line b. Determine the Q point for the circuit c. Find IBQ, ICQ, VCEQ 20 μA 25 10 μA 1=00 30 20 V • 270 ΚΩ IBQ 470 92 Ico VCEQ 2.2 kQ2
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