27. (a) Given Pmax= 14 mW for each diode of Fig. 2.151, determine the maximum current rating of each diode (using the approximate equivalent model). (b) Determine Imax for Vi=160 V. (c) Determine the current through each diode at V. using the results of part (b). (e) If only one diode were present, determine the diode current and compare it to the maximum rating.
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- How is a solid-state diode tested? Explain.The diodes in the circuit are Silicon with aforward voltage of 0.7 V. Fill up the tableshowing the state, voltage and current ofeach of the diodes. Show how youvalidated the state of each diode. Followthe reference shown in determiningwhether the diode voltages and currentsare positive or negative.Calculate the voltage and current of the diode in the figure for each of the diode's models. In each case, determine the voltage across the resistor. Additionally, in each case, determine the diode's power. Assume that Rb is ten ohms.
- Question 2: (show your detailed answer for each part of questions below) a) For the series diode configuration in the figure below, determine VD, VR and Ip. + Vn Si 10V 3 kn V b) Calculate the current through a 70 2 resistor in the circuit shown in the below figure. Assume the diodes to be of silicon and the forward resistance of each diode is ta-1 2 Show the answer steps. D Dz 70 n www 20 V DA DyComplete the table. Make a forward bias and reverse bias graph using SILICON DIODE. Then explain how did you get the values after you complete the table. Explain how you plot the graph for the forward and reverse biased. To sketch the characteristic curve of the diode you need to vary voltages on diode and measure current flowing during forward and reverse bias condition. Fill up the table below using circuit shown and vary battery voltages. Measure voltage and current of diode then sketch the graph. Voltage X axis and Current Y axis. The multisim is the reference for the table.B Answer all the questions. (1) The ms value of the input voltage for a bridge network is shown in the following figure. (a) Sketch Vo and determine average output Vo for the configuration of the following figure. (b) Determine the de voltage and r.m.s voltage of output. (c) Determine the required PIV rating of each diode. (d) Does this network work as a clipper? Ideal diodes 170 V 2.2 k2 2.2 ka -170 V 2.2 ka Sketch V and K
- Which of the following graphs will be appropriate to describe output V,oul of the circuit given below? (The voltage V, is 3V, V2 is 3V and input to the circuit V is 5sint. Assume both diodes are identical. Use constant voltage drop for diode as 0.7V) R, = 1 kn Vout V D, A D, V2 -3 V1 a) 2.3 -3 b) 2.3 4.3 c) 3.7 2.3 d)USING D1 1N4001G or SILICON DIODE. To sketch the characteristic curve of the diode you need to vary voltages on diode and measure current flowing during forward and reverse bias condition. Fill up the table below using circuit shown and vary battery voltages. Measure voltage and current of diode then sketch the graph. Voltage X axis and Current Y axis. Battery Diode Diode Voltage Current Voltage Battery Diode voltage Voltage 0.1V 0.3V 0.5V 0.7V 1.0V 2.0V 3.0V 10.0V Diode Current Forward Bias Condition A V 0.1V 0.5V 2.0V 5.0V 10v 20V 25V 30V Reverse Bias Condition Note: used any electronics software to perform this activityAll pn diodes shown below have a voltage drop of 0.3 V when they are "ON". +4V DIA 5k2 D2 VOUT VA 5k2 V8 D1B -2V Indicate in the table whether the diodes D1A, D1B and D2 are ON/OFF with the given VA and VB values. Also give the corresponding VOUT numerical values. DIA (ON/OFF) DiB(ON/OFF) Dz(ON/OFF) VoUT (sign and numerical value) VA |V8 OV +4V OV +3V ov +4V
- A Si pn junction diode is operating under forward bias conduction. If the forward current is 4 mA and the reverse saturation current is 1 nA, then what will be the voltage across the diode? Assume the diode is kept at 400 K temperature.We know that the Si-diode will pass the current in a forward biased region. This behavior is useful for many applications. C)Plot the V-I Characteristic Curve of the diode.Diode Configuration + Vp IR Si b.1 For the series diode configuration, determine: Vp, ID, and VR. Use the approximate model of the silicon diode. Ip E 8 V R 2.2 k2 VR