2. For a p-substrate silicon MOS capacitor at T = 300 K, the substrate doping is NA = 3.5 × 1016 / cm³. Value of n; at T = 300 K is 1.5 × 1010 / cm³. (i) What is bulk potential oB ? (ii) When the surface is inverted, what is the total surface band bending os ? (iii) For Pm = 4.25 eV and x = 4.01 eV, what is the flat band voltage VFB? PB = " In (A) VeB = 9m – (x + + ¢») kT EG 2

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
icon
Related questions
icon
Concept explainers
Question
2. For a p-substrate silicon MOS capacitor at T = 300 K, the substrate doping is NA = 3.5 × 1016 /
cm³. Value of n; at T = 300 K is 1.5 x 1010 / cm³.
(i) What is bulk potential þB ?
(ii) When the surface is inverted, what is the total surface band bending os ?
(iii) For Pm = 4.25 eV and x = 4.01 eV, what is the flat band voltage VFB?
kT
-In (4)
VFB = Pm - (x+
+ PB
PB
2
(iv) Find the maximum depletion width xDT (µm) when the surface is inverted.
(v) Find the threshold voltage of this device VT in V if the oxide thickness tox = 8.6 nm. Consider
NA = 3.5 x 1016 / cm³. Use the VFB as calculated in 2(iii).
Transcribed Image Text:2. For a p-substrate silicon MOS capacitor at T = 300 K, the substrate doping is NA = 3.5 × 1016 / cm³. Value of n; at T = 300 K is 1.5 x 1010 / cm³. (i) What is bulk potential þB ? (ii) When the surface is inverted, what is the total surface band bending os ? (iii) For Pm = 4.25 eV and x = 4.01 eV, what is the flat band voltage VFB? kT -In (4) VFB = Pm - (x+ + PB PB 2 (iv) Find the maximum depletion width xDT (µm) when the surface is inverted. (v) Find the threshold voltage of this device VT in V if the oxide thickness tox = 8.6 nm. Consider NA = 3.5 x 1016 / cm³. Use the VFB as calculated in 2(iii).
Expert Solution
steps

Step by step

Solved in 4 steps

Blurred answer
Knowledge Booster
Working and Construction of Diode
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.
Similar questions
  • SEE MORE QUESTIONS
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,