EEE439 project S24
.pdf
keyboard_arrow_up
School
Arizona State University *
*We aren’t endorsed by this school
Course
439
Subject
Electrical Engineering
Date
Apr 3, 2024
Type
Pages
3
Uploaded by Anon878978 on coursehero.com
Semiconductor Facilities and Cleanroom Practices - EEE439/591 Spring '24 – Class Project
Create a model
for the system below, which is a 10 ft x 10 ft x 1 ft “slice” of a cleanroom, that gives the particle count
in any 1 ft
3
unit in the volume (all other slices in the room are numerically identical to this so they can be ignored in this analysis). Assume that air only flows sideways when it is forced to do so by the equipment (dark gray)
but ignore the effect of people on airflow. For recirculation purposes, all the air in Zone 1 (light gray) is recirculated
whereas the portion of air recirculated in Zone 2 (light blue) depends on the flow rate into this zone and the exhaust flow rate
. Test your model with the following “test case” input, which includes two people in the room: •
Final filter flow rate = 100 cfm/column •
Exhaust flow rate = 125 cfm •
Make-up filter efficiency = 99.9% •
Recirc filter efficiency = 99.9% •
Final filter efficiency = 99.97% •
External particle density = 7.5 x 10
5
/ft
3
•
Generation rate (per min) of 0.5 µm particles in each ft
3
: 1 2
If you have designed the model properly, for these inputs you should obtain the particle counts (number of particles in each 1 ft
3
volume shown to one decimal place for clarity) shown below. Note that the number of particles penetrating the final filters in each
column
for these input parameters is around 2.8/min
- your model should also give this value (a more exact value is 2.812844707, which is much more precision than you would ever need but it will help you to determine if your model is working!). Since none of the counts in this volume exceeds 100 particles/ft
3
of 0.5 µm diameter, this could be a Class 100
environment under Fed. Std. 209E. Now consider the following scenarios: Case 1.
(For all
sections of the class.) Better cleanroom garments, materials, and operating practices lead to smaller generation rates inside the room, to give the particle generation map below. Note that the flow rates and final filter efficiency have also been altered. Show the particle counts in the volume. What class under Fed. Std. 209E would this room attain? •
Final filter flow rate = 120 cfm/column •
Exhaust flow rate = 150 cfm •
Make-up filter efficiency = 99.9% •
Recirc filter efficiency = 99.9% •
Final filter efficiency = 99.997% •
External particle density = 7.5 x 10
5
/ft
3
•
Generation rate (per min) of 0.5 µm particles in each ft
3
:
Your preview ends here
Eager to read complete document? Join bartleby learn and gain access to the full version
- Access to all documents
- Unlimited textbook solutions
- 24/7 expert homework help
Related Questions
7. Each of three insulators forming a string has self-capacitance of "C farad. The shunt capacitance of
each cap of msulator is 0 25 C to earth and 0-15 C to line. Calculate the voltage distribution across each
insulator as a pecentage of line voltage to earth and the string efficiency.
arrow_forward
Each of three insulators forming a string has self-capacitance of "C" farad. The shunt capacitance of
each cap of insulator is 0-25 C to earth and 0-15 C to line. Calculate the voltage distribution across each
insulator as a pecentage of line voltage to earth and the string efficiency.
arrow_forward
In electronic circuits it is not unusual to encounter currents in themicroampere range. Assume a 35 μA current, due to the flow ofelectrons. What is the average number of electrons per second that flowpast a fixed reference cross section that is perpendicular to the directionof flow?
arrow_forward
4- Electrical failure of insulators occurs due to
and
5- The other name of self-capacitance in a string of suspension insulators is
......
arrow_forward
A. Explain the difference between charging current andfaradaic current.
B. What is the purpose of waiting 1s after a voltage pulse before measuring current in sampled current voltammetry?
C. Why is square wave voltammetry more sensitive than sampled current voltammetry?
arrow_forward
Explain, what is the potential barrier in semiconductors.
Note:
no need to give an exact definition, please explain it in an easy way.
arrow_forward
A-How temperature affects the conductivity of conductive metals and how it affects semiconductors.semiconductors
B-What is superconductivity, how does it relate to temperature? Some examples of superconductors.superconductors.
arrow_forward
Which of the following statement is true?
a.
Angle between load voltage and load current in a pure capacitive load is 45 degree.
b.
Angle between load voltage and load current in a pure capacitive load is is 180 degree.
c.
Angle between load voltage and load current in a pure capacitive load is is zero.
d.
Angle between load voltage and load current in a pure capacitive load is is 90 degree.
arrow_forward
Identify elements that are in parallel a. in Figure P1.37, b. in Figure P1.43, c. in Figure P1.44.
arrow_forward
Calculate the equivalent resistances Rin of the following circuits. (The resistance value of the diodes in the conduction will be 0, the resistance value of the diodes in the insulation will be taken as infinity. R1=10ohm
arrow_forward
1. Answer the following with "TRUE" or "FALSE" then explain why.
________a.) Charges choose the path of least resistance. Given a resistor in parallel with a diode, no current willflow through the resistor when the applied voltage exceeds the diode’s forward voltage.________b.) Since diodes are unidirectional components, it will always block AC signals e.g. pulse train,sawtooth, triangular signals.________c.) Silicon diodes typically have a forward voltage of 0.7V.
arrow_forward
Question
A suspension type insulator has three units with self-capacitance C and ground capacitance 0.1C.
What will be the string efficiency?
arrow_forward
PROBLEM 2
Two semiconductor materials A and B shown in the given figure, are made by doping germanium
crystal with arsenic and indium respectively. The two are joined end connected to a battery as
shown in figure. Is the junction forward biased or reverse biased?
A B
arrow_forward
Briefly describe engineering materials
arrow_forward
relationship between leakage current and open circuit voltage in silicon solar cells quantitatively and qualitatively.
arrow_forward
8. Liquids with solid impurities
a) Have higher dielectrie strength
b) Of large size have higher dielectric strength
c) Have lower dielectric strength as compared to pure liquids
d) None of the above
9. Peak to peak ripple is defined as
a) the difference between average de voltage and peak value
b) the difference between maximum and minimum de voltage
c) the difference between maximum ac and average dc voltages
d) the difference between ac (rms) and average de voltages
10. In a Cockroft-Walton circuit, input voltage 100 kV load current 25 mA, supply
frequency 100 Hz, each capacitor 10 nF. The optimum no. of stages for maximum
output voltage is
a) 1
b) 2
c) 10
d) 35
arrow_forward
Nichrome ribbon resistor elements each has a resistance of 1 ohm. The element is made from sheet of nichrome alloy, 0.025cm thick. If the width of the ribbon is 0.3cm, what length is required per element? Assume specific resistance of nichrome allow to be 109micro ohm-cm.
arrow_forward
Please give a detailed solution
Thank you
arrow_forward
We want to investigate how the field strength will be with air as dielectric and with steatite. A plate
capacitor is placed in a 24 kV network between phase and ground. The relative permittivity of air is
&=1 and for steatite &-6. The plate capacitor has area = 1m². The distance between the electrodes is
2 mm.
Ep = 8.854-10-12 F/m
A=1m²
d=2mm
a) Calculate the maximum field strength in the plate capacitor. (Answer: 9.8kV/mm)
b) What is the capacitance of the capacitor if we use steatite? (Answer: C = 26.6nF)
arrow_forward
Compare alternative and direct currents by comparing their physical properties. (Explain alternans, cycles, periods, frequency terms during this comparison. Also in this comparison, explain the electron flow directions separately in alternating and direct current)
arrow_forward
How about solving this using KCL equations? Thank you
arrow_forward
(1) What is normally the origin of majority charge carriers? and of minority charge carriers?
(2) How does one estimate the overall (net) charge in a piece of extrinsicsemiconductor where we have both majority and minority carriers?
arrow_forward
Please make a concept map of the covalent link theme for semiconductors with the following subtopics, you can add tables, graphs, images, or things you think are relevant 1.5 Driving process
1.5.0 Introduction
1.5.1 Mobility
1.5.2 Relationships between carrier equilibrium concentrations
1.5.3 Detailed balance principle
1.5.4 Carrier equilibrium concentrations in homogeneous semiconductors
1.5.5 Conductivity
1.5.6 Hall Effect
arrow_forward
The work function for the anode is bigger than that of the cathode, resulting in a so-called "contact-potential difference" between the anode and cathode. Its effect is to shift the entire Current vs. Voltage curve (why?). Estimate the contact potential difference. 7
arrow_forward
Discuss the significance of Moore's Law in the context of microchips and semiconductor technology. How has the continuous scaling of microchips influenced their performance and energy efficiency over time?
arrow_forward
D1
Vsecondary
Vfiltered
D2
V1
sine
Rload I
120 VAC @ 60 Hz
D3
10:1
-
D4
Figure 1: Bridge Rectifier Voltage Regulator Circuit
The filter capacitor C, is recharged on every half-cycle of V
secondary.
Given:
Rioad = 100 N
VDiodes = 0.7 V
Vi is given in RMS
What is the minimum value of capacitor C, required such that Vrutered does not drop below 8 V?
arrow_forward
Which statement(s) is (are) true about a P-N junction:
A. P-N junction consists of n-type and p-type semiconductor materials.B. Free electrons in n-type diffuse across junction to p-type.C. A depletion region formation happens due to electrons and holes moving away from each other due to the electric field.
arrow_forward
a) Explain the band structure of an electrical conductor (metal), a semiconductor, and an insulator at 0 K by showing the valence and conduction bands and fermi energy levels. Explain how the electrical conduction takes place in these three types of materials. Give an example for each type of material.
b)Explain what n and p-type semiconductors are using their band structures.
arrow_forward
(a) Suppose the excess carriers is uniform, what changes does it make to the 'Ambipolar transport equation' for a n-type semiconductor. Explain the equations.
arrow_forward
Please choose the correct answer and explain if possible. Thank you.
4. The main terminal voltage across an ON conducting SCR depends on the instantaneous main terminal current in the following way:
a. They are proportional
b. The voltage increases as the current increases, but no quite proportionally
c. The voltage increases as the current increases, by a squared (seond power) relationship
d. They are virtually non-related
5. To turn Off a conducting SCR in a dc-powered circuit, it is necessary to:
a. Interrupt (stop) the gate current
b. Wait for the main terminal current to fall below IHO when the supply voltage crosses through zero
c. Deliver a pulse of negative gate current via the gate lead
d. Place a temporary reverse bias across the SCR’s main terminals
6. In a simple RC charging circuit used for trigger-control of an SCR, a good range of adjustment of the RC time-constant is:
a. 1 to 5 msec
b. 1 to 30 msec
c. 0.1 to 10 msec
d. 2 to 25 μsec
arrow_forward
SEE MORE QUESTIONS
Recommended textbooks for you
Electricity for Refrigeration, Heating, and Air C...
Mechanical Engineering
ISBN:9781337399128
Author:Russell E. Smith
Publisher:Cengage Learning
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Related Questions
- 7. Each of three insulators forming a string has self-capacitance of "C farad. The shunt capacitance of each cap of msulator is 0 25 C to earth and 0-15 C to line. Calculate the voltage distribution across each insulator as a pecentage of line voltage to earth and the string efficiency.arrow_forwardEach of three insulators forming a string has self-capacitance of "C" farad. The shunt capacitance of each cap of insulator is 0-25 C to earth and 0-15 C to line. Calculate the voltage distribution across each insulator as a pecentage of line voltage to earth and the string efficiency.arrow_forwardIn electronic circuits it is not unusual to encounter currents in themicroampere range. Assume a 35 μA current, due to the flow ofelectrons. What is the average number of electrons per second that flowpast a fixed reference cross section that is perpendicular to the directionof flow?arrow_forward
- 4- Electrical failure of insulators occurs due to and 5- The other name of self-capacitance in a string of suspension insulators is ......arrow_forwardA. Explain the difference between charging current andfaradaic current. B. What is the purpose of waiting 1s after a voltage pulse before measuring current in sampled current voltammetry? C. Why is square wave voltammetry more sensitive than sampled current voltammetry?arrow_forwardExplain, what is the potential barrier in semiconductors. Note: no need to give an exact definition, please explain it in an easy way.arrow_forward
- A-How temperature affects the conductivity of conductive metals and how it affects semiconductors.semiconductors B-What is superconductivity, how does it relate to temperature? Some examples of superconductors.superconductors.arrow_forwardWhich of the following statement is true? a. Angle between load voltage and load current in a pure capacitive load is 45 degree. b. Angle between load voltage and load current in a pure capacitive load is is 180 degree. c. Angle between load voltage and load current in a pure capacitive load is is zero. d. Angle between load voltage and load current in a pure capacitive load is is 90 degree.arrow_forwardIdentify elements that are in parallel a. in Figure P1.37, b. in Figure P1.43, c. in Figure P1.44.arrow_forward
- Calculate the equivalent resistances Rin of the following circuits. (The resistance value of the diodes in the conduction will be 0, the resistance value of the diodes in the insulation will be taken as infinity. R1=10ohmarrow_forward1. Answer the following with "TRUE" or "FALSE" then explain why. ________a.) Charges choose the path of least resistance. Given a resistor in parallel with a diode, no current willflow through the resistor when the applied voltage exceeds the diode’s forward voltage.________b.) Since diodes are unidirectional components, it will always block AC signals e.g. pulse train,sawtooth, triangular signals.________c.) Silicon diodes typically have a forward voltage of 0.7V.arrow_forwardQuestion A suspension type insulator has three units with self-capacitance C and ground capacitance 0.1C. What will be the string efficiency?arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Electricity for Refrigeration, Heating, and Air C...Mechanical EngineeringISBN:9781337399128Author:Russell E. SmithPublisher:Cengage LearningDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage Learning
Electricity for Refrigeration, Heating, and Air C...
Mechanical Engineering
ISBN:9781337399128
Author:Russell E. Smith
Publisher:Cengage Learning
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning